The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-μm CMOS image sensor

T. H. Hsu, Y. K. Fang, D. N. Yaung, S. G. Wuu, H. C. Chien, C. S. Wang, J. S. Lin, C. H. Tseng, S. F. Chen, C. S. Lin, Yu-Cheng Lin

Research output: Contribution to journalLetterpeer-review

Abstract

An effective method to evaluate the hot-carrier-induced pixel performance degradation of 0.18-μm CMOS active pixel sensor has been reported. The hot carriers generated at the source follower transistor and absorbed by the nearby photodiode will cause the pixel performance degradation such as increase of dark signal and decrease of operation range. Based on the detailed measurements through overall operation conditions, a simple method has been proposed to evaluate the degradation induced by the hot carriers and, thus, provides a design guide to predict pixel performance.

Original languageEnglish
Pages (from-to)427-429
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number6
DOIs
Publication statusPublished - 2004 Jun 1
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-μm CMOS image sensor'. Together they form a unique fingerprint.

Cite this