The microwave dielectric materials of (Zn1-xMg x)TiNb2O8 for electroceramics devices applications

Cheng Liang Huang; Sen Hung Huang; Ruei Zhung Lee

doi:10.4028/www.scientific.net/KEM.547.49

The microwave dielectric materials of (Zn_1-xMg _x)TiNb₂O₈ for electroceramics devices applications

Cheng Liang Huang, Sen Hung Huang, Ruei Zhung Lee

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

The microwave dielectric properties of ZnTiNb₂O₈ ( ε_r~34, Q×f ∼ 42,500GHz, τ_f ∼ -52ppm/°C) was reported by Hong et. al. To lower the dielectric loss of ZnTiNb₂O₈, we studied the systems of (Zn _1-xMg_x)TiNb₂O₈ (x=0.02-0.1) ceramics. The manner of equivalent-charge trace substitutions for Zn ²⁺-sites were replaced with Mg²⁺. In order to achieve more stability, CaTiO₃ (τ _f ∼ +800ppm/°C) was used to adjust the negative τ_f of (Zn_0.95Mg _0.05)TiNb₂O₈ (τ _f~ -58ppm/°C). A bandpass filter using coupled microstrip-line resonators have been designd for wireless LAN system such as IEEE 802.11 ( 2.4 or 5 GHz). The response of the implemented filter used 0.8(Zn_0.95Mg _0.05)TiNb₂O₈-0.2 CaTiO₃ (ε_r∼ 35.77, Q×f ∼18,000GHz, τ_f ∼ +4ppm/°C) dielectric substrates. In this paper, the bandpass filter area designed on 0.8(Zn_0.95Mg_0.05)TiNb₂O ₈-0.2 CaTiO₃ is reduced 88% than FR4 substrates and the near zero τf makes better frequency stability.

Original language	English
Title of host publication	Advanced Multifunctional Electroceramics
Publisher	Trans Tech Publications Ltd
Pages	49-55
Number of pages	7
ISBN (Print)	9783037856314
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.547.49
Publication status	Published - 2013
Event	5th International Conference on Electroceramics, ICE 2011 - Sydney, NSW, Australia Duration: 2011 Dec 12 → 2011 Dec 16

Publication series

Name	Key Engineering Materials
Volume	547
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Other

Other	5th International Conference on Electroceramics, ICE 2011
Country/Territory	Australia
City	Sydney, NSW
Period	11-12-12 → 11-12-16

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.547.49

Cite this

@inproceedings{986cd72c195e40d7a5ca7b9d2d9d5795,

title = "The microwave dielectric materials of (Zn1-xMg x)TiNb2O8 for electroceramics devices applications",

abstract = "The microwave dielectric properties of ZnTiNb2O8 ( εr~34, Q×f ∼ 42,500GHz, τf ∼ -52ppm/°C) was reported by Hong et. al. To lower the dielectric loss of ZnTiNb2O8, we studied the systems of (Zn 1-xMgx)TiNb2O8 (x=0.02-0.1) ceramics. The manner of equivalent-charge trace substitutions for Zn 2+-sites were replaced with Mg2+. In order to achieve more stability, CaTiO3 (τ f ∼ +800ppm/°C) was used to adjust the negative τf of (Zn0.95Mg 0.05)TiNb2O8 (τ f~ -58ppm/°C). A bandpass filter using coupled microstrip-line resonators have been designd for wireless LAN system such as IEEE 802.11 ( 2.4 or 5 GHz). The response of the implemented filter used 0.8(Zn0.95Mg 0.05)TiNb2O8-0.2 CaTiO3 (εr∼ 35.77, Q×f ∼18,000GHz, τf ∼ +4ppm/°C) dielectric substrates. In this paper, the bandpass filter area designed on 0.8(Zn0.95Mg0.05)TiNb2O 8-0.2 CaTiO3 is reduced 88% than FR4 substrates and the near zero τf makes better frequency stability.",

author = "Huang, {Cheng Liang} and Huang, {Sen Hung} and Lee, {Ruei Zhung}",

year = "2013",

doi = "10.4028/www.scientific.net/KEM.547.49",

language = "English",

isbn = "9783037856314",

series = "Key Engineering Materials",

publisher = "Trans Tech Publications Ltd",

pages = "49--55",

booktitle = "Advanced Multifunctional Electroceramics",

}

Huang, CL, Huang, SH & Lee, RZ 2013, The microwave dielectric materials of (Zn_1-xMg _x)TiNb₂O₈ for electroceramics devices applications. in Advanced Multifunctional Electroceramics. Key Engineering Materials, vol. 547, Trans Tech Publications Ltd, pp. 49-55, 5th International Conference on Electroceramics, ICE 2011, Sydney, NSW, Australia, 11-12-12. https://doi.org/10.4028/www.scientific.net/KEM.547.49

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T1 - The microwave dielectric materials of (Zn1-xMg x)TiNb2O8 for electroceramics devices applications

AU - Huang, Cheng Liang

AU - Huang, Sen Hung

AU - Lee, Ruei Zhung

PY - 2013

Y1 - 2013

N2 - The microwave dielectric properties of ZnTiNb2O8 ( εr~34, Q×f ∼ 42,500GHz, τf ∼ -52ppm/°C) was reported by Hong et. al. To lower the dielectric loss of ZnTiNb2O8, we studied the systems of (Zn 1-xMgx)TiNb2O8 (x=0.02-0.1) ceramics. The manner of equivalent-charge trace substitutions for Zn 2+-sites were replaced with Mg2+. In order to achieve more stability, CaTiO3 (τ f ∼ +800ppm/°C) was used to adjust the negative τf of (Zn0.95Mg 0.05)TiNb2O8 (τ f~ -58ppm/°C). A bandpass filter using coupled microstrip-line resonators have been designd for wireless LAN system such as IEEE 802.11 ( 2.4 or 5 GHz). The response of the implemented filter used 0.8(Zn0.95Mg 0.05)TiNb2O8-0.2 CaTiO3 (εr∼ 35.77, Q×f ∼18,000GHz, τf ∼ +4ppm/°C) dielectric substrates. In this paper, the bandpass filter area designed on 0.8(Zn0.95Mg0.05)TiNb2O 8-0.2 CaTiO3 is reduced 88% than FR4 substrates and the near zero τf makes better frequency stability.

AB - The microwave dielectric properties of ZnTiNb2O8 ( εr~34, Q×f ∼ 42,500GHz, τf ∼ -52ppm/°C) was reported by Hong et. al. To lower the dielectric loss of ZnTiNb2O8, we studied the systems of (Zn 1-xMgx)TiNb2O8 (x=0.02-0.1) ceramics. The manner of equivalent-charge trace substitutions for Zn 2+-sites were replaced with Mg2+. In order to achieve more stability, CaTiO3 (τ f ∼ +800ppm/°C) was used to adjust the negative τf of (Zn0.95Mg 0.05)TiNb2O8 (τ f~ -58ppm/°C). A bandpass filter using coupled microstrip-line resonators have been designd for wireless LAN system such as IEEE 802.11 ( 2.4 or 5 GHz). The response of the implemented filter used 0.8(Zn0.95Mg 0.05)TiNb2O8-0.2 CaTiO3 (εr∼ 35.77, Q×f ∼18,000GHz, τf ∼ +4ppm/°C) dielectric substrates. In this paper, the bandpass filter area designed on 0.8(Zn0.95Mg0.05)TiNb2O 8-0.2 CaTiO3 is reduced 88% than FR4 substrates and the near zero τf makes better frequency stability.

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PB - Trans Tech Publications Ltd

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