The molecular beam epitaxy growth, structure, and magnetism of Si 1-xMnx films

S. H. Chiu; H. S. Hsu; J. C.A. Huang

doi:10.1063/1.2830974

The molecular beam epitaxy growth, structure, and magnetism of Si _1-xMn_x films

S. H. Chiu, H. S. Hsu, J. C.A. Huang

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The type-IV diluted magnetic semiconductor (DMS) [Si (20 Å) Mn (x)] 30 multilayers (MLs) with nominal thickness x=1, 1.5, and 2.0 Å have been prepared by molecular beam epitaxy. The structure, magnetism, and electrical property of these MLs were investigated. Above room temperature ferromagnetism has been observed and structure probed by x-ray absorption spectroscopy. The Mn local structure is similar to Si simulation and the Mn chemical valences of the MLs are in the range from zero (Mn foil) to Mn+2. The relative carrier concentration is sensitive to the formation of room temperature ferromagnetism, suggesting that hole mediated mechanism play an important role in Si:Mn DMSs.

Original language	English
Article number	07D110
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2830974
Publication status	Published - 2008 Apr 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.2830974

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abstract = "The type-IV diluted magnetic semiconductor (DMS) [Si (20 {\AA}) Mn (x)] 30 multilayers (MLs) with nominal thickness x=1, 1.5, and 2.0 {\AA} have been prepared by molecular beam epitaxy. The structure, magnetism, and electrical property of these MLs were investigated. Above room temperature ferromagnetism has been observed and structure probed by x-ray absorption spectroscopy. The Mn local structure is similar to Si simulation and the Mn chemical valences of the MLs are in the range from zero (Mn foil) to Mn+2. The relative carrier concentration is sensitive to the formation of room temperature ferromagnetism, suggesting that hole mediated mechanism play an important role in Si:Mn DMSs.",

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AB - The type-IV diluted magnetic semiconductor (DMS) [Si (20 Å) Mn (x)] 30 multilayers (MLs) with nominal thickness x=1, 1.5, and 2.0 Å have been prepared by molecular beam epitaxy. The structure, magnetism, and electrical property of these MLs were investigated. Above room temperature ferromagnetism has been observed and structure probed by x-ray absorption spectroscopy. The Mn local structure is similar to Si simulation and the Mn chemical valences of the MLs are in the range from zero (Mn foil) to Mn+2. The relative carrier concentration is sensitive to the formation of room temperature ferromagnetism, suggesting that hole mediated mechanism play an important role in Si:Mn DMSs.

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