The molecular beam epitaxy growth, structure, and magnetism of Si 1-xMnx films

S. H. Chiu, H. S. Hsu, J. C.A. Huang

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24 Citations (Scopus)

Abstract

The type-IV diluted magnetic semiconductor (DMS) [Si (20 Å) Mn (x)] 30 multilayers (MLs) with nominal thickness x=1, 1.5, and 2.0 Å have been prepared by molecular beam epitaxy. The structure, magnetism, and electrical property of these MLs were investigated. Above room temperature ferromagnetism has been observed and structure probed by x-ray absorption spectroscopy. The Mn local structure is similar to Si simulation and the Mn chemical valences of the MLs are in the range from zero (Mn foil) to Mn+2. The relative carrier concentration is sensitive to the formation of room temperature ferromagnetism, suggesting that hole mediated mechanism play an important role in Si:Mn DMSs.

Original languageEnglish
Article number07D110
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008 Apr 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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