Abstract
The zincating was conducted on the Al pads ( 100 × 100 × 1.5 (μm3) of silicon chips. Each chip consists of 400 Al pads. The zincating deposition conducted on the Al pads was a three-time multiple zincating process. The first-time zincating lead to larger independent particle deposits, i.e. of poor coverage. The second-time zincating caused very fine, dense particles. The deposits became a continuous film, with only a few vacancies after the third-time zincating. The acidic etching steps between the consecutive zincating operations, tend to refine the deposit nodules. The X-ray photoelectron spectroscopy results revealed that the surface of the as-deposited zincating layer was oxidized, while the intermediate acidic etching tended to eliminate the oxidized surface and lead to elemental zinc.
Original language | English |
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Pages (from-to) | 36-40 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 288 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1996 Nov 15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry