A GaAs delta-doped tunneling diode having a δn+-i- δp+-i-δn+ structure is investigated. A negative differential resistance behavior with peak-to-valley ratio as high as 3.1 and a peak current density of 3 kA/cm2 is exhibited when the device is operated at room temperature. It becomes resistor-like at the temperature of 77 K. Theoretical analysis, based on envelope wave function approximation, indicates that the resonant interband tunneling process is responsible for room-temperature characteristics, while the band-gap widening effect is responsible for low-temperature behavior. Furthermore, the dependence of device performance on such structure parameters as doping level, and the physical dimension of the delta-doped region, etc., is discussed, and found to agree well with experimental results.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)