The negative differential resistance behavior in delta-doped GaAs structure due to resonant interband tunneling

M. P. Houng, Y. H. Wang, H. H. Chen, H. C. Wei, Y. H. Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A GaAs delta-doped tunneling diode having a δn+-i- δp+-i-δn+ structure is investigated. A negative differential resistance behavior with peak-to-valley ratio as high as 3.1 and a peak current density of 3 kA/cm2 is exhibited when the device is operated at room temperature. It becomes resistor-like at the temperature of 77 K. Theoretical analysis, based on envelope wave function approximation, indicates that the resonant interband tunneling process is responsible for room-temperature characteristics, while the band-gap widening effect is responsible for low-temperature behavior. Furthermore, the dependence of device performance on such structure parameters as doping level, and the physical dimension of the delta-doped region, etc., is discussed, and found to agree well with experimental results.

Original languageEnglish
Pages (from-to)780-782
Number of pages3
JournalJournal of Applied Physics
Volume71
Issue number2
DOIs
Publication statusPublished - 1992 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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