The negative differential resistance behavior of GaAs delta-doped structures

M. P. Houng, Y. H. Wang, H. H. Chen, C. C. Pan

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this work we analyzed the negative differential resistance (NDR) phenomenon of GaAs delta-doped structures by using the Airy function approach. Theoretical results indicate that the NDR behavior results from the resonant tunneling process in the delta-doped layer, which is further evidenced by the measured current-voltage characteristic of a Schottky-δn+-Schottky device. Our analysis method is useful for designing GaAs delta-doped devices.

Original languageEnglish
Pages (from-to)67-71
Number of pages5
JournalSolid State Electronics
Volume35
Issue number1
DOIs
Publication statusPublished - 1992 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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