In this work we analyzed the negative differential resistance (NDR) phenomenon of GaAs delta-doped structures by using the Airy function approach. Theoretical results indicate that the NDR behavior results from the resonant tunneling process in the delta-doped layer, which is further evidenced by the measured current-voltage characteristic of a Schottky-δn+-Schottky device. Our analysis method is useful for designing GaAs delta-doped devices.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry