The negative differential resistance characteristics of double-barrier interband tunneling structures

Mau-phon Houng; Yeong-Her Wang; C. L. Shen

doi:10.1063/1.349053

The negative differential resistance characteristics of double-barrier interband tunneling structures

Mau-phon Houng, Yeong-Her Wang, C. L. Shen

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The tunneling mechanism responsible for negative differential resistance in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures was studied systematically. It was found that the peak current results from resonant interband tunneling and that the spacers make a significant contribution to the valley current. Furthermore, the optimal thicknesses for the GaSb well and AlSb barriers were predicted to be 65 and 10 Å, respectively, which agrees fairly well with experimental results. Our theoretical results give some useful design principles for this type of interband tunneling device.

Original language	English
Pages (from-to)	4640-4642
Number of pages	3
Journal	Journal of Applied Physics
Volume	70
Issue number	8
DOIs	https://doi.org/10.1063/1.349053
Publication status	Published - 1991 Dec 1

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.349053

Cite this

@article{5485fe413672474aa94184fbba350e03,

title = "The negative differential resistance characteristics of double-barrier interband tunneling structures",

abstract = "The tunneling mechanism responsible for negative differential resistance in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures was studied systematically. It was found that the peak current results from resonant interband tunneling and that the spacers make a significant contribution to the valley current. Furthermore, the optimal thicknesses for the GaSb well and AlSb barriers were predicted to be 65 and 10 {\AA}, respectively, which agrees fairly well with experimental results. Our theoretical results give some useful design principles for this type of interband tunneling device.",

author = "Mau-phon Houng and Yeong-Her Wang and Shen, {C. L.}",

year = "1991",

month = dec,

day = "1",

doi = "10.1063/1.349053",

language = "English",

volume = "70",

pages = "4640--4642",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - The negative differential resistance characteristics of double-barrier interband tunneling structures

AU - Houng, Mau-phon

AU - Wang, Yeong-Her

AU - Shen, C. L.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - The tunneling mechanism responsible for negative differential resistance in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures was studied systematically. It was found that the peak current results from resonant interband tunneling and that the spacers make a significant contribution to the valley current. Furthermore, the optimal thicknesses for the GaSb well and AlSb barriers were predicted to be 65 and 10 Å, respectively, which agrees fairly well with experimental results. Our theoretical results give some useful design principles for this type of interband tunneling device.

AB - The tunneling mechanism responsible for negative differential resistance in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures was studied systematically. It was found that the peak current results from resonant interband tunneling and that the spacers make a significant contribution to the valley current. Furthermore, the optimal thicknesses for the GaSb well and AlSb barriers were predicted to be 65 and 10 Å, respectively, which agrees fairly well with experimental results. Our theoretical results give some useful design principles for this type of interband tunneling device.

UR - http://www.scopus.com/inward/record.url?scp=36449008395&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449008395&partnerID=8YFLogxK

U2 - 10.1063/1.349053

DO - 10.1063/1.349053

M3 - Article

AN - SCOPUS:36449008395

SN - 0021-8979

VL - 70

SP - 4640

EP - 4642

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

The negative differential resistance characteristics of double-barrier interband tunneling structures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this