The optical and electrical properties of F doped ZnO thin film by different post-annealing temperatures

Chih Yun Lin, Tao Hsing Chen, Sheng Lung Tu, Yun Hwei Shen, Jia Ting Huang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The optical and electronic properties of thin films of FZO (F:ZnO = 2:98 at.%) after annealing at different temperature was investigated. The films used in this study were prepared by Radio Frequency Magnetron Sputtering (RF-sputtering) on Corning glass substrates. The results show that the FZO transparent conductive films made at a sputtering power of 50 W, in an Argon atmosphere 15 sccm, after 90 min of deposition at a pressure of 6 mtorr, annealed at 400 °C had the lowest electrical resistivity, and an average transmittance of 85.16% at 400 nm. XRD analysis revealed a peak of growth in the (002) direction which rose with annealing temperature indicating improved crystallinity.

Original languageEnglish
Article number169
JournalOptical and Quantum Electronics
Volume50
Issue number4
DOIs
Publication statusPublished - 2018 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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