The optical and electronic properties of thin films of FZO (F:ZnO = 2:98 at.%) after annealing at different temperature was investigated. The films used in this study were prepared by Radio Frequency Magnetron Sputtering (RF-sputtering) on Corning glass substrates. The results show that the FZO transparent conductive films made at a sputtering power of 50 W, in an Argon atmosphere 15 sccm, after 90 min of deposition at a pressure of 6 mtorr, annealed at 400 °C had the lowest electrical resistivity, and an average transmittance of 85.16% at 400 nm. XRD analysis revealed a peak of growth in the (002) direction which rose with annealing temperature indicating improved crystallinity.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering