Abstract
Second-harmonic generation from porous silicon with a magnitude of two orders greater than that from silicon crystalline wafers has been observed. The measured effective second-order nonlinear susceptibility [formula Omitted] for a p-type porous silicon is 1.96 × 10-7 esu which is estimated on the base of a bulk property rather than on quantum confinement owing to its large surface to volume ratio.
Original language | English |
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Pages (from-to) | 651-653 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 5 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1993 Jun |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering