Second-harmonic generation from porous silicon with a magnitude of two orders greater than that from silicon crystalline wafers has been observed. The measured effective second-order nonlinear susceptibility [formula Omitted] for a p-type porous silicon is 1.96 × 10-7 esu which is estimated on the base of a bulk property rather than on quantum confinement owing to its large surface to volume ratio.
|Number of pages||3|
|Journal||IEEE Photonics Technology Letters|
|Publication status||Published - 1993 Jun|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering