This paper investigates the influence of various sintering temperatures on the microstructure and photoluminescence properties of KSr0.99PO4:Eu0.013+ phosphors prepared by microwave-assisted sintering. The package properties of KSr0.99PO4:Eu0.013+ phosphors combined with a n-UV InGaN chip are also investigated. To achieve maximum luminescence, the optimum sintering temperature for KSr0.99PO4:Eu0.013+ phosphors prepared by microwave assisted-sintering is 1200 °C due to the pure phase and uniform and large particles (as identified by XRD and SEM). The results of the package properties showed that KSr1−xPO4:xEu3+ (x = 0.01) phosphor sintered at 1200 °C by microwave-assisted sintering could emit orange-red light via the n-UV InGaN chip.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry