TY - JOUR
T1 - The output power enhancements of GaN-Based blue light-emitting diodes with highly reflective Ag/Cr/Au Trilayer omnidirectional reflective electrode pads
AU - Shei, Shih Chang
AU - Lai, Wei Chih
AU - Sheu, Jinn Kong
AU - Hung, I. Hsiu
AU - Chang, Shoou Jinn
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - In this study, we demonstrated the fabrication of GaN-based light-emitting diodes (LEDs) on a patterned sapphire substrate (PSS) or non- PSS with nonalloy Ag/Cr/Au trilayer metal electrode pads on the exposed np-GaN and indium tin oxide layers to be the n-type electrode and p-type electrode, respectively. The forward voltages of all LED samples at 20mA were in the range of 3.1-3.2V and were sufficiently low compared with those of commercial GaN-based LEDs. In the present experiment, the 20mA output power of GaN-based LEDs with Ag/Cr/Au trilayer electrode bonding pads can be increased by a magnitude of 17% compared with those of the conventional LEDs with nonalloy Cr/Au bonding pads. Moreover, the 20mA output power of GaN-based LEDs will be increased by more than 40 and 11% by introducing PSS and Ag/Cr/Au trilayer electrode bonding pads compared with those of the conventional LEDs and PSS LEDs, respectively, with nonalloy Cr/Au bonding pads.
AB - In this study, we demonstrated the fabrication of GaN-based light-emitting diodes (LEDs) on a patterned sapphire substrate (PSS) or non- PSS with nonalloy Ag/Cr/Au trilayer metal electrode pads on the exposed np-GaN and indium tin oxide layers to be the n-type electrode and p-type electrode, respectively. The forward voltages of all LED samples at 20mA were in the range of 3.1-3.2V and were sufficiently low compared with those of commercial GaN-based LEDs. In the present experiment, the 20mA output power of GaN-based LEDs with Ag/Cr/Au trilayer electrode bonding pads can be increased by a magnitude of 17% compared with those of the conventional LEDs with nonalloy Cr/Au bonding pads. Moreover, the 20mA output power of GaN-based LEDs will be increased by more than 40 and 11% by introducing PSS and Ag/Cr/Au trilayer electrode bonding pads compared with those of the conventional LEDs and PSS LEDs, respectively, with nonalloy Cr/Au bonding pads.
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U2 - 10.1143/JJAP.48.102103
DO - 10.1143/JJAP.48.102103
M3 - Article
AN - SCOPUS:77952680018
VL - 48
SP - 1021031
EP - 1021034
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 10 Part 1
ER -