The peak effect in bulk Y-Ba-Cu-O superconductor with CeO2 doping by the infiltration growth method

Po Wei Chen; In Gann Chen; Shih Yun Chen; Maw Kuen Wu

doi:10.1088/0953-2048/24/8/085021

The peak effect in bulk Y-Ba-Cu-O superconductor with CeO₂ doping by the infiltration growth method

Po Wei Chen, In Gann Chen, Shih Yun Chen, Maw Kuen Wu

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

In this study, large single grain Y-Ba-Cu-O (YBCO) superconductors with CeO₂ addition were fabricated by the infiltration and growth (IG) technique. It is noticeable that the CeO₂ doped IG-YBCO sample showed a superior critical current density J_c(H, T) with a peak effect. The J_c (3T, 65K) of the IG-YBCO sample with CeO₂ addition reached 10⁵Acm^{- 2}, which was two times higher than that of the CeO₂ doped top-seeded melt texture (TSMT)-YBCO sample. Microstructure analysis indicated that the concentration of Sm in the CeO ₂ doped IG-YBCO sample was 0.2mol%. The Sm which dissolved from the SmBCO seed diffused into the bulk to form compositional fluctuations of (Y, Sm)BCO and was correlated to the effective pinning in high field regions (or peak effect) to improve the J_c(H, T) in high fields. In addition, the maximum trapped field value of 0.23T and trapped field profile of the CeO ₂ doped sample grown by IG are larger than that of 0.13T grown by TSMT using the same diameter of precursor pellets.

Original language	English
Article number	085021
Journal	Superconductor Science and Technology
Volume	24
Issue number	8
DOIs	https://doi.org/10.1088/0953-2048/24/8/085021
Publication status	Published - 2011 Aug

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/24/8/085021

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title = "The peak effect in bulk Y-Ba-Cu-O superconductor with CeO2 doping by the infiltration growth method",

abstract = "In this study, large single grain Y-Ba-Cu-O (YBCO) superconductors with CeO2 addition were fabricated by the infiltration and growth (IG) technique. It is noticeable that the CeO2 doped IG-YBCO sample showed a superior critical current density Jc(H, T) with a peak effect. The Jc (3T, 65K) of the IG-YBCO sample with CeO2 addition reached 105Acm- 2, which was two times higher than that of the CeO2 doped top-seeded melt texture (TSMT)-YBCO sample. Microstructure analysis indicated that the concentration of Sm in the CeO 2 doped IG-YBCO sample was 0.2mol%. The Sm which dissolved from the SmBCO seed diffused into the bulk to form compositional fluctuations of (Y, Sm)BCO and was correlated to the effective pinning in high field regions (or peak effect) to improve the Jc(H, T) in high fields. In addition, the maximum trapped field value of 0.23T and trapped field profile of the CeO 2 doped sample grown by IG are larger than that of 0.13T grown by TSMT using the same diameter of precursor pellets.",

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AU - Wu, Maw Kuen

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AB - In this study, large single grain Y-Ba-Cu-O (YBCO) superconductors with CeO2 addition were fabricated by the infiltration and growth (IG) technique. It is noticeable that the CeO2 doped IG-YBCO sample showed a superior critical current density Jc(H, T) with a peak effect. The Jc (3T, 65K) of the IG-YBCO sample with CeO2 addition reached 105Acm- 2, which was two times higher than that of the CeO2 doped top-seeded melt texture (TSMT)-YBCO sample. Microstructure analysis indicated that the concentration of Sm in the CeO 2 doped IG-YBCO sample was 0.2mol%. The Sm which dissolved from the SmBCO seed diffused into the bulk to form compositional fluctuations of (Y, Sm)BCO and was correlated to the effective pinning in high field regions (or peak effect) to improve the Jc(H, T) in high fields. In addition, the maximum trapped field value of 0.23T and trapped field profile of the CeO 2 doped sample grown by IG are larger than that of 0.13T grown by TSMT using the same diameter of precursor pellets.

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The peak effect in bulk Y-Ba-Cu-O superconductor with CeO₂ doping by the infiltration growth method

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