The performance improvement of N2 plasma treatment on ZrO2 gate dielectric thin-film transistors with atmospheric pressure plasma-enhanced chemical vapor deposition IGZO channel

Chien Hung Wu; Bo Wen Huang; Kow Ming Chang; Shui Jinn Wang; Jian Hong Lin; Jui Mei Hsu

doi:10.1166/jnn.2016.12612

The performance improvement of N₂ plasma treatment on ZrO₂ gate dielectric thin-film transistors with atmospheric pressure plasma-enhanced chemical vapor deposition IGZO channel

Chien Hung Wu, Bo Wen Huang, Kow Ming Chang, Shui Jinn Wang, Jian Hong Lin, Jui Mei Hsu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The aim of this paper is to illustrate the N₂ plasma treatment for high-κ ZrO₂ gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N₂ plasma treated ZrO₂ gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N₂ plasma treatment with field-effect mobility (μ_FET) of 22.5 cm²/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I_on/I_off) of 1.49 × 10⁷.

Original language	English
Pages (from-to)	6044-6048
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
Issue number	6
DOIs	https://doi.org/10.1166/jnn.2016.12612
Publication status	Published - 2016 Jun 1

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

Access to Document

10.1166/jnn.2016.12612

Cite this

@article{28db88b88a6f41eaadf18e29af95c790,

title = "The performance improvement of N2 plasma treatment on ZrO2 gate dielectric thin-film transistors with atmospheric pressure plasma-enhanced chemical vapor deposition IGZO channel",

abstract = "The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μFET) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (Ion/Ioff) of 1.49 × 107.",

author = "Wu, {Chien Hung} and Huang, {Bo Wen} and Chang, {Kow Ming} and Wang, {Shui Jinn} and Lin, {Jian Hong} and Hsu, {Jui Mei}",

year = "2016",

month = jun,

day = "1",

doi = "10.1166/jnn.2016.12612",

language = "English",

volume = "16",

pages = "6044--6048",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "6",

}

The performance improvement of N₂ plasma treatment on ZrO₂ gate dielectric thin-film transistors with atmospheric pressure plasma-enhanced chemical vapor deposition IGZO channel. / Wu, Chien Hung; Huang, Bo Wen; Chang, Kow Ming et al.
In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 6, 01.06.2016, p. 6044-6048.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The performance improvement of N2 plasma treatment on ZrO2 gate dielectric thin-film transistors with atmospheric pressure plasma-enhanced chemical vapor deposition IGZO channel

AU - Wu, Chien Hung

AU - Huang, Bo Wen

AU - Chang, Kow Ming

AU - Wang, Shui Jinn

AU - Lin, Jian Hong

AU - Hsu, Jui Mei

PY - 2016/6/1

Y1 - 2016/6/1

N2 - The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μFET) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (Ion/Ioff) of 1.49 × 107.

AB - The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μFET) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (Ion/Ioff) of 1.49 × 107.

UR - http://www.scopus.com/inward/record.url?scp=84975109791&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975109791&partnerID=8YFLogxK

U2 - 10.1166/jnn.2016.12612

DO - 10.1166/jnn.2016.12612

M3 - Article

AN - SCOPUS:84975109791

SN - 1533-4880

VL - 16

SP - 6044

EP - 6048

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 6

ER -

The performance improvement of N₂ plasma treatment on ZrO₂ gate dielectric thin-film transistors with atmospheric pressure plasma-enhanced chemical vapor deposition IGZO channel

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this