Low temperature silicon-dioxide (SiO 2 ) layers were deposited on strained SiGe by using direct photo-chemical vapor deposition (DPCVD) with a deuterium lamp as the excitation source. It was found that the deposition rate increases linearly with the chamber pressure. The Auger electron spectroscopy profile shows that neither was Ge rejected nor was a Ge-rich layer formed after devices were fabricated. The capacitance-voltage (C-V) measurements show that the flat-band voltage is about -1.1 V with an effective oxide charge of about 7 × 10 10 cm -2 and interface trap density of 3 × 10 11 cm -2 eV -1 . At room temperature, the leakage current is about 3 × 10 -9 A/cm 2 under a 2 × 10 6 V/cm electric field. The breakdown field can reach over 16 MV/cm at 1 μA/cm 2 for these SiGe metal-oxide semiconductor (MOS) diodes.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films