The properties of Ti-doped ZnO films before and after annealing in the different atmosphere

Su Shia Lin, Jow-Lay Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A radio frequency power (r.f.) of 200W was supplied to ZnO target, and a direct current (d.c.) power of 30W was supplied to Ti target for the preparation of Ti-doped ZnO (ZnO:Ti) films. The Ti content was controlled by d.c. power, and maintained at 1.1 at.% as measured by XPS. The as-deposited ZnO:Ti films had polycrystalline structure and low resistivity (9.69×10 -3Ω-cm). After annealing in N2 or O2, ZnO:Ti films exhibited poor crystallinity, and the resistivity increased substantially. The lower optical energy gap (3.31 eV) could be obtained as ZnO:Ti film annealing in O2. However, the weak absorption in the visible region of the spectrum terminated at shorter wavelengths with the onset of the ultraviolet absorption edge for all samples. Annealing in N2 or O2 did not improve the properties of ZnO:Ti films.

Original languageEnglish
Title of host publicationHeat Treatment of Materials, AHTM ' 05 - Proceedings of the 3rd Asian Conference on Heat Treatment of Materials
PublisherTrans Tech Publications Ltd
Pages571-576
Number of pages6
ISBN (Print)9783908451259
DOIs
Publication statusPublished - 2006 Jan 1
Event3rd Asian Conference on Heat Treatment of Materials,(AHTM '05) - Gyeongju, Korea, Republic of
Duration: 2005 Nov 102005 Nov 12

Publication series

NameSolid State Phenomena
Volume118
ISSN (Print)1012-0394

Other

Other3rd Asian Conference on Heat Treatment of Materials,(AHTM '05)
CountryKorea, Republic of
CityGyeongju
Period05-11-1005-11-12

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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