The properties of Ti-doped ZnO films before and after annealing in the different atmosphere

Su Shia Lin; Jow Lay Huang

doi:10.4028/3-908451-25-6.571

The properties of Ti-doped ZnO films before and after annealing in the different atmosphere

Su Shia Lin, Jow Lay Huang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A radio frequency power (r.f.) of 200W was supplied to ZnO target, and a direct current (d.c.) power of 30W was supplied to Ti target for the preparation of Ti-doped ZnO (ZnO:Ti) films. The Ti content was controlled by d.c. power, and maintained at 1.1 at.% as measured by XPS. The as-deposited ZnO:Ti films had polycrystalline structure and low resistivity (9.69×10 ^-3Ω-cm). After annealing in N₂ or O₂, ZnO:Ti films exhibited poor crystallinity, and the resistivity increased substantially. The lower optical energy gap (3.31 eV) could be obtained as ZnO:Ti film annealing in O₂. However, the weak absorption in the visible region of the spectrum terminated at shorter wavelengths with the onset of the ultraviolet absorption edge for all samples. Annealing in N₂ or O₂ did not improve the properties of ZnO:Ti films.

Original language	English
Title of host publication	Heat Treatment of Materials, AHTM ' 05 - Proceedings of the 3rd Asian Conference on Heat Treatment of Materials
Publisher	Trans Tech Publications Ltd
Pages	571-576
Number of pages	6
ISBN (Print)	9783908451259
DOIs	https://doi.org/10.4028/3-908451-25-6.571
Publication status	Published - 2006
Event	3rd Asian Conference on Heat Treatment of Materials,(AHTM '05) - Gyeongju, Korea, Republic of Duration: 2005 Nov 10 → 2005 Nov 12

Publication series

Name	Solid State Phenomena
Volume	118
ISSN (Print)	1012-0394

Other

Other	3rd Asian Conference on Heat Treatment of Materials,(AHTM '05)
Country/Territory	Korea, Republic of
City	Gyeongju
Period	05-11-10 → 05-11-12

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Access to Document

10.4028/3-908451-25-6.571

Cite this

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title = "The properties of Ti-doped ZnO films before and after annealing in the different atmosphere",

abstract = "A radio frequency power (r.f.) of 200W was supplied to ZnO target, and a direct current (d.c.) power of 30W was supplied to Ti target for the preparation of Ti-doped ZnO (ZnO:Ti) films. The Ti content was controlled by d.c. power, and maintained at 1.1 at.% as measured by XPS. The as-deposited ZnO:Ti films had polycrystalline structure and low resistivity (9.69×10 -3Ω-cm). After annealing in N2 or O2, ZnO:Ti films exhibited poor crystallinity, and the resistivity increased substantially. The lower optical energy gap (3.31 eV) could be obtained as ZnO:Ti film annealing in O2. However, the weak absorption in the visible region of the spectrum terminated at shorter wavelengths with the onset of the ultraviolet absorption edge for all samples. Annealing in N2 or O2 did not improve the properties of ZnO:Ti films.",

author = "Lin, {Su Shia} and Huang, {Jow Lay}",

year = "2006",

doi = "10.4028/3-908451-25-6.571",

language = "English",

isbn = "9783908451259",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "571--576",

booktitle = "Heat Treatment of Materials, AHTM ' 05 - Proceedings of the 3rd Asian Conference on Heat Treatment of Materials",

note = "3rd Asian Conference on Heat Treatment of Materials,(AHTM '05) ; Conference date: 10-11-2005 Through 12-11-2005",

}

Lin, SS & Huang, JL 2006, The properties of Ti-doped ZnO films before and after annealing in the different atmosphere. in Heat Treatment of Materials, AHTM ' 05 - Proceedings of the 3rd Asian Conference on Heat Treatment of Materials. Solid State Phenomena, vol. 118, Trans Tech Publications Ltd, pp. 571-576, 3rd Asian Conference on Heat Treatment of Materials,(AHTM '05), Gyeongju, Korea, Republic of, 05-11-10. https://doi.org/10.4028/3-908451-25-6.571

The properties of Ti-doped ZnO films before and after annealing in the different atmosphere. / Lin, Su Shia; Huang, Jow Lay.
Heat Treatment of Materials, AHTM ' 05 - Proceedings of the 3rd Asian Conference on Heat Treatment of Materials. Trans Tech Publications Ltd, 2006. p. 571-576 (Solid State Phenomena; Vol. 118).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lin, Su Shia

AU - Huang, Jow Lay

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N2 - A radio frequency power (r.f.) of 200W was supplied to ZnO target, and a direct current (d.c.) power of 30W was supplied to Ti target for the preparation of Ti-doped ZnO (ZnO:Ti) films. The Ti content was controlled by d.c. power, and maintained at 1.1 at.% as measured by XPS. The as-deposited ZnO:Ti films had polycrystalline structure and low resistivity (9.69×10 -3Ω-cm). After annealing in N2 or O2, ZnO:Ti films exhibited poor crystallinity, and the resistivity increased substantially. The lower optical energy gap (3.31 eV) could be obtained as ZnO:Ti film annealing in O2. However, the weak absorption in the visible region of the spectrum terminated at shorter wavelengths with the onset of the ultraviolet absorption edge for all samples. Annealing in N2 or O2 did not improve the properties of ZnO:Ti films.

AB - A radio frequency power (r.f.) of 200W was supplied to ZnO target, and a direct current (d.c.) power of 30W was supplied to Ti target for the preparation of Ti-doped ZnO (ZnO:Ti) films. The Ti content was controlled by d.c. power, and maintained at 1.1 at.% as measured by XPS. The as-deposited ZnO:Ti films had polycrystalline structure and low resistivity (9.69×10 -3Ω-cm). After annealing in N2 or O2, ZnO:Ti films exhibited poor crystallinity, and the resistivity increased substantially. The lower optical energy gap (3.31 eV) could be obtained as ZnO:Ti film annealing in O2. However, the weak absorption in the visible region of the spectrum terminated at shorter wavelengths with the onset of the ultraviolet absorption edge for all samples. Annealing in N2 or O2 did not improve the properties of ZnO:Ti films.

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ER -

The properties of Ti-doped ZnO films before and after annealing in the different atmosphere

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