A radio frequency power (r.f.) of 200W was supplied to ZnO target, and a direct current (d.c.) power of 30W was supplied to Ti target for the preparation of Ti-doped ZnO (ZnO:Ti) films. The Ti content was controlled by d.c. power, and maintained at 1.1 at.% as measured by XPS. The as-deposited ZnO:Ti films had polycrystalline structure and low resistivity (9.69×10 -3Ω-cm). After annealing in N2 or O2, ZnO:Ti films exhibited poor crystallinity, and the resistivity increased substantially. The lower optical energy gap (3.31 eV) could be obtained as ZnO:Ti film annealing in O2. However, the weak absorption in the visible region of the spectrum terminated at shorter wavelengths with the onset of the ultraviolet absorption edge for all samples. Annealing in N2 or O2 did not improve the properties of ZnO:Ti films.