The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents

Y. K. Su, W. R. Chen, S. J. Chang, F. S. Juang, W. H. Lan, A. C.H. Lin, H. Chang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The reliable n +-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LED's) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back to back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wave-length in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.

Original languageEnglish
Pages (from-to)1330-1333
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume47
Issue number7
DOIs
Publication statusPublished - 2000 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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