The reduction of antiphase boundary defects by the surfactant antimony and its application to the III-V multi-junction solar cells

Shih Chang Tong; Jyh Shyang Wang; Chii Bin Wu; Chih Hung Wu; Jung Ting Chang; Pai Chun Wei

doi:10.1016/j.solmat.2015.09.047

The reduction of antiphase boundary defects by the surfactant antimony and its application to the III-V multi-junction solar cells

Shih Chang Tong, Jyh Shyang Wang, Chii Bin Wu, Chih Hung Wu, Jung Ting Chang, Pai Chun Wei

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The CuPt_B ordering and the antiphase boundaries (APBs) in GaInP₂ epifilms were found to be diminished by the addition of the surfactant antimony (Sb) during the epitaxy. This is evidenced by the disappearance of the APBs related deep level peak in the Raman and photoluminescence (PL) spectra, as well as the significantly increased lifetime of the minority carriers. The GaInP₂/metamorphic (MM)-GaInAs/Ge multi-junction solar cells made by this method possess enhanced short circuit current density and show a narrower distribution of the open circuit voltage. We believe the use of surfactant Sb to control APBs during the growth of InGaP₂ would be very useful for designing GaInP₂-based devices, such as solar cells, laser diodes and light-emitting diodes.

Original language	English
Pages (from-to)	418-421
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	144
DOIs	https://doi.org/10.1016/j.solmat.2015.09.047
Publication status	Published - 2016 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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10.1016/j.solmat.2015.09.047

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title = "The reduction of antiphase boundary defects by the surfactant antimony and its application to the III-V multi-junction solar cells",

abstract = "The CuPtB ordering and the antiphase boundaries (APBs) in GaInP2 epifilms were found to be diminished by the addition of the surfactant antimony (Sb) during the epitaxy. This is evidenced by the disappearance of the APBs related deep level peak in the Raman and photoluminescence (PL) spectra, as well as the significantly increased lifetime of the minority carriers. The GaInP2/metamorphic (MM)-GaInAs/Ge multi-junction solar cells made by this method possess enhanced short circuit current density and show a narrower distribution of the open circuit voltage. We believe the use of surfactant Sb to control APBs during the growth of InGaP2 would be very useful for designing GaInP2-based devices, such as solar cells, laser diodes and light-emitting diodes.",

author = "Tong, {Shih Chang} and Wang, {Jyh Shyang} and Wu, {Chii Bin} and Wu, {Chih Hung} and Chang, {Jung Ting} and Wei, {Pai Chun}",

note = "Funding Information: The authors acknowledge the financial support of the National Science Council of Taiwan ( MOST 103-2221-E-033-018 , and NSC 102-2112-M-033-004-MY3 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2016",

month = jan,

day = "1",

doi = "10.1016/j.solmat.2015.09.047",

language = "English",

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pages = "418--421",

journal = "Solar Energy Materials and Solar Cells",

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AU - Tong, Shih Chang

AU - Wang, Jyh Shyang

AU - Wu, Chii Bin

AU - Wu, Chih Hung

AU - Chang, Jung Ting

AU - Wei, Pai Chun

N1 - Funding Information: The authors acknowledge the financial support of the National Science Council of Taiwan ( MOST 103-2221-E-033-018 , and NSC 102-2112-M-033-004-MY3 ). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - The CuPtB ordering and the antiphase boundaries (APBs) in GaInP2 epifilms were found to be diminished by the addition of the surfactant antimony (Sb) during the epitaxy. This is evidenced by the disappearance of the APBs related deep level peak in the Raman and photoluminescence (PL) spectra, as well as the significantly increased lifetime of the minority carriers. The GaInP2/metamorphic (MM)-GaInAs/Ge multi-junction solar cells made by this method possess enhanced short circuit current density and show a narrower distribution of the open circuit voltage. We believe the use of surfactant Sb to control APBs during the growth of InGaP2 would be very useful for designing GaInP2-based devices, such as solar cells, laser diodes and light-emitting diodes.

AB - The CuPtB ordering and the antiphase boundaries (APBs) in GaInP2 epifilms were found to be diminished by the addition of the surfactant antimony (Sb) during the epitaxy. This is evidenced by the disappearance of the APBs related deep level peak in the Raman and photoluminescence (PL) spectra, as well as the significantly increased lifetime of the minority carriers. The GaInP2/metamorphic (MM)-GaInAs/Ge multi-junction solar cells made by this method possess enhanced short circuit current density and show a narrower distribution of the open circuit voltage. We believe the use of surfactant Sb to control APBs during the growth of InGaP2 would be very useful for designing GaInP2-based devices, such as solar cells, laser diodes and light-emitting diodes.

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VL - 144

SP - 418

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

The reduction of antiphase boundary defects by the surfactant antimony and its application to the III-V multi-junction solar cells

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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