In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Tix Hf1-xO (x =0:63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1cm2 V-1 s-1, and an ON/OFF current ratio of 105. The small subthreshold swing and low positive threshold voltage are attributed to the higher value of k of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)