A high quality silica glass was used to passivate high-voltage power transistors. With the self-gettering ability, the interface state density of silica glass is reduced after heat treatment. The properties of this glass are analysed and compared with that of thermal oxide. Experimental results show its good properties for passivation. The characteristics of passivated high-voltage transistors are also discussed.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering