The silica glass passivation for high-voltage power transistors

B. D. Liu, C. Y. Chang, K. C. Chen

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A high quality silica glass was used to passivate high-voltage power transistors. With the self-gettering ability, the interface state density of silica glass is reduced after heat treatment. The properties of this glass are analysed and compared with that of thermal oxide. Experimental results show its good properties for passivation. The characteristics of passivated high-voltage transistors are also discussed.

Original languageEnglish
Pages (from-to)857-861
Number of pages5
JournalInternational Journal of Electronics
Volume62
Issue number6
DOIs
Publication statusPublished - 1987 Jun

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'The silica glass passivation for high-voltage power transistors'. Together they form a unique fingerprint.

Cite this