The silica glass passivation for high-voltage power transistors

B. D. Liu; C. Y. Chang; K. C. Chen

doi:10.1080/00207218708921038

The silica glass passivation for high-voltage power transistors

B. D. Liu, C. Y. Chang, K. C. Chen

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A high quality silica glass was used to passivate high-voltage power transistors. With the self-gettering ability, the interface state density of silica glass is reduced after heat treatment. The properties of this glass are analysed and compared with that of thermal oxide. Experimental results show its good properties for passivation. The characteristics of passivated high-voltage transistors are also discussed.

Original language	English
Pages (from-to)	857-861
Number of pages	5
Journal	International Journal of Electronics
Volume	62
Issue number	6
DOIs	https://doi.org/10.1080/00207218708921038
Publication status	Published - 1987 Jun

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1080/00207218708921038

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abstract = "A high quality silica glass was used to passivate high-voltage power transistors. With the self-gettering ability, the interface state density of silica glass is reduced after heat treatment. The properties of this glass are analysed and compared with that of thermal oxide. Experimental results show its good properties for passivation. The characteristics of passivated high-voltage transistors are also discussed.",

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