The strain effect on the electronic structures of In1-xGaxAs/GaAs quantum wells

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The electronic structures of In1-xGaxAs/GaAs strained-layer quantum wells are investigated systematically based on the bond-orbital model. The theoretical results are in reasonable agreement with experiments. It is found that the compressive stress which develops between InGaAs and GaAs will result in the heavy hole subbands being shifted up relative to the light hole subbands. Therefore, more structures in the spectroscopic spectra and novel device properties, such as high speed p-channel field effect transistors, are expected. Furthermore, the variations of hole effective mass with strain are discussed. A criterion useful for device design is obtained.

Original languageEnglish
Pages (from-to)421-426
Number of pages6
JournalSuperlattices and Microstructures
Issue number4
Publication statusPublished - 1989

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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