The structural and optical characterization of a new class of dilute nitride compound semiconductors: GaInNP

H. P. Hsu, Y. S. Huang, Chung-Lin Wu, Y. K. Su, F. S. Juang, Y. G. Hong, C. W. Tu

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6 Citations (Scopus)


We report a detailed structural and optical characterization of Ga 0.46In0.54NxP1-x (0 ≤ x ≤ 2%) films grown by gas-source molecular beam epitaxy on GaAs(001) substrates. The polarized high resolution x-ray rocking curves (HXRC) and contactless electroreflectance (CER) and piezoreflectance (PzR) spectra at room temperature show anisotropic character along the [110] and [11̄0] directions. Ordering-induced superlattice-like microstructure observed in high resolution transmission electron microscope (HTEM) images confirms the spontaneous ordering in Ga0.46In0.54NxP1-x layers. In addition, the temperature dependent optical properties are characterized via polarized PzR measurements in the range between 15 and 300 K. The PzR spectra obtained are fitted using the first derivative of a Lorentzian line-shape functional form. The valence band maximum, crystal field/strain splitting and spin - orbit splitting to conduction band transition energies, denoted respectively as Eg, Eg + Δ12 and E g + Δ13, are accurately determined. The temperature dependences of these near band edge critical point transition energies are analysed using the Varshni expression and an expression containing the Bose-Einstein occupation factor for phonons. The parameters that describe the temperature variation of the transition energies are evaluated and discussed.

Original languageEnglish
JournalJournal of Physics Condensed Matter
Issue number31
Publication statusPublished - 2004 Aug 11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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