An epitaxial L10 FePt thin film grown from an [Fe(10 Å)/Pt(10 Å)]15 multilayer with the orientation of (001) was prepared by an ion beam sputtering deposition method without buffer layer. From the measurement data of X-ray diffraction and X-ray reflectivity, the multilayer structure was totally disappeared and a uniform FePt alloy thin film was formed at temperatures higher than 600 °C. For the as-deposited thin film grown at 100 °C, the multilayer already possesses an epitaxial structure. The epitaxial relation is FePt(001)//MgO(001) and this epitaxial relation persists after sequential high temperature annealing. An epitaxial L10 ordered FePt(001) film with order parameter of 0.95 was obtained when the annealing temperature reached 650 °C. The ordered FePt(001) thin film has a perpendicular magnetic anisotropy with a squareness of 0.95 ± 0.03 on the magnetic hysteresis loop. This experiment demonstrates that the low energy ion beam sputtering deposition will preserve the epitaxial relation with no buffer layer between multilayer and substrate.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry