The study of stress and nitrogen vacancies on GaN nanowires by raman scattering and current-voltage measurement

Kuo Hao Lee, In-Gann Chen

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report the Raman scattering and current-voltage (I-V) measurements of wurtzite GaN nanowires grown in different flow ratios of H2(N H3 + H2) ambient by chemical vapor deposition. In Raman measurements, the variation of the E2 (high) peak position revealed that the nanowires exhibit tensile stress resulting from hydrogen relaxation. Compared with nanowires with a smooth surface, the nanowires with a rough surface had a higher intensity ratio of A1 (LO) E2, where LO is longitudinal optical. For I-V measurement, the decreasing of resistance and the increasing of ideality factor for different nanowires revealed that the electron tunneling behavior between the metal-semiconductor interface was the dominate mechanism. This result was caused by the formation of nitrogen vacancies in GaN nanowires.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number4
DOIs
Publication statusPublished - 2009 Mar 4

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Voltage measurement
Electric current measurement
Nanowires
Vacancies
Raman scattering
Nitrogen
Electron tunneling
Tensile stress
Hydrogen
Chemical vapor deposition
Metals
Semiconductor materials
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "We report the Raman scattering and current-voltage (I-V) measurements of wurtzite GaN nanowires grown in different flow ratios of H2(N H3 + H2) ambient by chemical vapor deposition. In Raman measurements, the variation of the E2 (high) peak position revealed that the nanowires exhibit tensile stress resulting from hydrogen relaxation. Compared with nanowires with a smooth surface, the nanowires with a rough surface had a higher intensity ratio of A1 (LO) E2, where LO is longitudinal optical. For I-V measurement, the decreasing of resistance and the increasing of ideality factor for different nanowires revealed that the electron tunneling behavior between the metal-semiconductor interface was the dominate mechanism. This result was caused by the formation of nitrogen vacancies in GaN nanowires.",
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AB - We report the Raman scattering and current-voltage (I-V) measurements of wurtzite GaN nanowires grown in different flow ratios of H2(N H3 + H2) ambient by chemical vapor deposition. In Raman measurements, the variation of the E2 (high) peak position revealed that the nanowires exhibit tensile stress resulting from hydrogen relaxation. Compared with nanowires with a smooth surface, the nanowires with a rough surface had a higher intensity ratio of A1 (LO) E2, where LO is longitudinal optical. For I-V measurement, the decreasing of resistance and the increasing of ideality factor for different nanowires revealed that the electron tunneling behavior between the metal-semiconductor interface was the dominate mechanism. This result was caused by the formation of nitrogen vacancies in GaN nanowires.

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