We report the Raman scattering and current-voltage (I-V) measurements of wurtzite GaN nanowires grown in different flow ratios of H2(N H3 + H2) ambient by chemical vapor deposition. In Raman measurements, the variation of the E2 (high) peak position revealed that the nanowires exhibit tensile stress resulting from hydrogen relaxation. Compared with nanowires with a smooth surface, the nanowires with a rough surface had a higher intensity ratio of A1 (LO) E2, where LO is longitudinal optical. For I-V measurement, the decreasing of resistance and the increasing of ideality factor for different nanowires revealed that the electron tunneling behavior between the metal-semiconductor interface was the dominate mechanism. This result was caused by the formation of nitrogen vacancies in GaN nanowires.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry