Vertically aligned large-area p-Cu2O/n-AZO (Al-doped ZnO) radial heterojunction nanowire arrays were synthesized on silicon without using catalysts in thermal chemical vapor deposition followed by e-beam evaporation. Scanning electron microscopy and high-resolution transmission electron microscopy results show that poly-crystalline Cu2O nano-shells with thicknesses around 10nm conformably formed on the entire periphery of pre-grown Al:ZnO single-crystalline nanowires. The Al doping concentration in the Al:ZnO nanowires with diameters around 50nm were determined to be around 1.19at.% by electron energy loss spectroscopy. Room-temperature photoluminescence spectra show that the broad green bands of pristine ZnO nanowires were eliminated by capping with Cu2O nano-shells. The current-voltage (I-V) measurements show that the p-Cu2O/n-AZO nanodiodes have well-defined current rectifying behavior. This paper provides a simple method to fabricate superior p-n radial nanowire arrays for developing nano-pixel optoelectronic devices and solarcells.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering