The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme

Chia Lin Hsu, Kuan Ting Lu, Wen Chin Lin, Jeh Chieh Lin, Chih Hsien Chen, Teng Chun Tsai, Climbing Huang, J. Y. Wu, Dung Ching Perng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

To keep pursuing the chip resistance capacitance (RC) delay improvement, it is necessary to further reduce k value. Accordingly, direct polished porous type ultra-low-k(ULK) film instead of non-porous low-k materials is integrated into Cu interconnects from 45 nm. However, because of the ULK characteristics and the minimized feature size, the time-to-break-down (TDDB) failure mode behaves different from silica glass or non-porous low-k film. And it is not only sensitive to geometries but also very sensitive to the engineering in the fabrication process. In this paper, we identified three TDDB failure modes, Cu protrusion from trench top interface, sidewall, and bottom corner, in the direct polished ULK scheme. In addition, on the basis of those failure modes, the related mechanisms in conjunction with the sensitivity to the processes are reported as well.

Original languageEnglish
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages918-921
Number of pages4
DOIs
Publication statusPublished - 2010 Oct 20
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: 2010 May 22010 May 6

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
CountryCanada
CityGarden Grove, CA
Period10-05-0210-05-06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme'. Together they form a unique fingerprint.

  • Cite this

    Hsu, C. L., Lu, K. T., Lin, W. C., Lin, J. C., Chen, C. H., Tsai, T. C., Huang, C., Wu, J. Y., & Perng, D. C. (2010). The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 918-921). [5488707] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488707