TY - GEN
T1 - The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme
AU - Hsu, Chia Lin
AU - Lu, Kuan Ting
AU - Lin, Wen Chin
AU - Lin, Jeh Chieh
AU - Chen, Chih Hsien
AU - Tsai, Teng Chun
AU - Huang, Climbing
AU - Wu, J. Y.
AU - Perng, Dung Ching
PY - 2010
Y1 - 2010
N2 - To keep pursuing the chip resistance capacitance (RC) delay improvement, it is necessary to further reduce k value. Accordingly, direct polished porous type ultra-low-k(ULK) film instead of non-porous low-k materials is integrated into Cu interconnects from 45 nm. However, because of the ULK characteristics and the minimized feature size, the time-to-break-down (TDDB) failure mode behaves different from silica glass or non-porous low-k film. And it is not only sensitive to geometries but also very sensitive to the engineering in the fabrication process. In this paper, we identified three TDDB failure modes, Cu protrusion from trench top interface, sidewall, and bottom corner, in the direct polished ULK scheme. In addition, on the basis of those failure modes, the related mechanisms in conjunction with the sensitivity to the processes are reported as well.
AB - To keep pursuing the chip resistance capacitance (RC) delay improvement, it is necessary to further reduce k value. Accordingly, direct polished porous type ultra-low-k(ULK) film instead of non-porous low-k materials is integrated into Cu interconnects from 45 nm. However, because of the ULK characteristics and the minimized feature size, the time-to-break-down (TDDB) failure mode behaves different from silica glass or non-porous low-k film. And it is not only sensitive to geometries but also very sensitive to the engineering in the fabrication process. In this paper, we identified three TDDB failure modes, Cu protrusion from trench top interface, sidewall, and bottom corner, in the direct polished ULK scheme. In addition, on the basis of those failure modes, the related mechanisms in conjunction with the sensitivity to the processes are reported as well.
UR - http://www.scopus.com/inward/record.url?scp=77957923725&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957923725&partnerID=8YFLogxK
U2 - 10.1109/IRPS.2010.5488707
DO - 10.1109/IRPS.2010.5488707
M3 - Conference contribution
AN - SCOPUS:77957923725
SN - 9781424454310
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 918
EP - 921
BT - 2010 IEEE International Reliability Physics Symposium, IRPS 2010
T2 - 2010 IEEE International Reliability Physics Symposium, IRPS 2010
Y2 - 2 May 2010 through 6 May 2010
ER -