The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme

Chia Lin Hsu, Kuan Ting Lu, Wen Chin Lin, Jeh Chieh Lin, Chih Hsien Chen, Teng Chun Tsai, Climbing Huang, J. Y. Wu, Dung-Ching Perng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

To keep pursuing the chip resistance capacitance (RC) delay improvement, it is necessary to further reduce k value. Accordingly, direct polished porous type ultra-low-k(ULK) film instead of non-porous low-k materials is integrated into Cu interconnects from 45 nm. However, because of the ULK characteristics and the minimized feature size, the time-to-break-down (TDDB) failure mode behaves different from silica glass or non-porous low-k film. And it is not only sensitive to geometries but also very sensitive to the engineering in the fabrication process. In this paper, we identified three TDDB failure modes, Cu protrusion from trench top interface, sidewall, and bottom corner, in the direct polished ULK scheme. In addition, on the basis of those failure modes, the related mechanisms in conjunction with the sensitivity to the processes are reported as well.

Original languageEnglish
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages918-921
Number of pages4
DOIs
Publication statusPublished - 2010 Oct 20
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: 2010 May 22010 May 6

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
CountryCanada
CityGarden Grove, CA
Period10-05-0210-05-06

Fingerprint

Failure modes
Fused silica
Capacitance
Fabrication
Geometry
Low-k dielectric

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hsu, C. L., Lu, K. T., Lin, W. C., Lin, J. C., Chen, C. H., Tsai, T. C., ... Perng, D-C. (2010). The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 918-921). [5488707] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488707
Hsu, Chia Lin ; Lu, Kuan Ting ; Lin, Wen Chin ; Lin, Jeh Chieh ; Chen, Chih Hsien ; Tsai, Teng Chun ; Huang, Climbing ; Wu, J. Y. ; Perng, Dung-Ching. / The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme. 2010 IEEE International Reliability Physics Symposium, IRPS 2010. 2010. pp. 918-921 (IEEE International Reliability Physics Symposium Proceedings).
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abstract = "To keep pursuing the chip resistance capacitance (RC) delay improvement, it is necessary to further reduce k value. Accordingly, direct polished porous type ultra-low-k(ULK) film instead of non-porous low-k materials is integrated into Cu interconnects from 45 nm. However, because of the ULK characteristics and the minimized feature size, the time-to-break-down (TDDB) failure mode behaves different from silica glass or non-porous low-k film. And it is not only sensitive to geometries but also very sensitive to the engineering in the fabrication process. In this paper, we identified three TDDB failure modes, Cu protrusion from trench top interface, sidewall, and bottom corner, in the direct polished ULK scheme. In addition, on the basis of those failure modes, the related mechanisms in conjunction with the sensitivity to the processes are reported as well.",
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Hsu, CL, Lu, KT, Lin, WC, Lin, JC, Chen, CH, Tsai, TC, Huang, C, Wu, JY & Perng, D-C 2010, The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme. in 2010 IEEE International Reliability Physics Symposium, IRPS 2010., 5488707, IEEE International Reliability Physics Symposium Proceedings, pp. 918-921, 2010 IEEE International Reliability Physics Symposium, IRPS 2010, Garden Grove, CA, Canada, 10-05-02. https://doi.org/10.1109/IRPS.2010.5488707

The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme. / Hsu, Chia Lin; Lu, Kuan Ting; Lin, Wen Chin; Lin, Jeh Chieh; Chen, Chih Hsien; Tsai, Teng Chun; Huang, Climbing; Wu, J. Y.; Perng, Dung-Ching.

2010 IEEE International Reliability Physics Symposium, IRPS 2010. 2010. p. 918-921 5488707 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Hsu CL, Lu KT, Lin WC, Lin JC, Chen CH, Tsai TC et al. The TDDB failure mode and its engineering study for 45NM and beyond in porous low k dielectrics direct polish scheme. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010. 2010. p. 918-921. 5488707. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488707