The TDDB study of post-CMP cleaning effect for L40 direct polished porous low K dielectrics Cu interconnect

C. L. Hsu, W. C. Lin, C. W. Hsu, J. C. Lin, T. C. Tsai, C. C. Huang, J. Y. Wu, D. C. Perng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In order to realize the high performance of RC delay, direct polished porous type ultra low-K film (ULK) is integrated into Cu dual-damascene interconnects for 45 nm and beyond. In the past, metal line seems not an important role in the world of TDDB. However, because of the minimized feature size and the relative fragile ULK film properties, it was found that the Cu roughness of polished surface also plays an important role to effect on the reliability such as TDDB from this generation, [1, 2]. Post-cleaning of Cu CMP is a major process to manage the Cu surface roughness. In this paper, the correlation for post-cleaning time to the TDDB was discussed. The mechanism with two models was built up to explain this behavior as well.

Original languageEnglish
Title of host publicationChemical Mechanical Polishing 11
Pages99-105
Number of pages7
Edition10
DOIs
Publication statusPublished - 2010 Dec 1
EventChemical Mechanical Polishing 11 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number10
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChemical Mechanical Polishing 11 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10-10-1010-10-15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Hsu, C. L., Lin, W. C., Hsu, C. W., Lin, J. C., Tsai, T. C., Huang, C. C., Wu, J. Y., & Perng, D. C. (2010). The TDDB study of post-CMP cleaning effect for L40 direct polished porous low K dielectrics Cu interconnect. In Chemical Mechanical Polishing 11 (10 ed., pp. 99-105). (ECS Transactions; Vol. 33, No. 10). https://doi.org/10.1149/1.3489050