TY - JOUR
T1 - The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors
AU - Wang, C. K.
AU - Ko, T. K.
AU - Chang, C. S.
AU - Chang, S. J.
AU - Su, Y. K.
AU - Wen, T. C.
AU - Kuo, C. H.
AU - Chiou, Y. Z.
N1 - Funding Information:
Manuscript received April 13, 2005; revised June 3, 2005. This work was supported by the National Science Council under Research Grant NSC-93-2215-E-006-010 and Grant NSC 93-2215-E-218-013. C. K. Wang, T. K. Ko, C. S. Chang, S. J. Chang, Y. K. Su, and T. C. Wen are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. C. H. Kuo is with the Institute of Optical Science, National Central University, Chung-Li 320, Taiwan, R.O.C. (e-mail: [email protected]). Y. Z. Chiou is with the Department of Electronics Engineering, Southern Taiwan University of Technology, Tainan 710, Taiwan, R.O.C. (e-mail: [email protected]). Digital Object Identifier 10.1109/LPT.2005.854358
PY - 2005/10
Y1 - 2005/10
N2 - By means of 60-, 150-, and 300-nm-thick blocking p-Al0.1 Ga0.9N layers, we have successfully achieved high performance on nitride-based p-i-n bandpass photodetectors. The peak responsivities were estimated to be 0.131, 0.129, and 0.13 A/W at 354, 357, and 356 nm for 60-, 150-, and 300-nm-thick p-Al0.1Ga0.9N blocking layer, respectively, corresponding to a quantum efficiency of around 46%. Moreover, spectral responsivity for 300-nm-thick blocking p-Al0.1Ga0.9N layer shows the narrowest bandpass characteristics from 320 to 365 nm (UV-A region). The photodetectors exhibit a 20-V break-down voltage and a small dark current of around 3 pA at 5-V reverse bias. For our 330 × 330 μm2 devices given bias of 0 V, the detectivity D* limited by Johnson noise are calculated to be 3.43 × 1013 6.77 × 1013, and 8.22 × 1013 cm - Hz0.5 W-1, respectively.
AB - By means of 60-, 150-, and 300-nm-thick blocking p-Al0.1 Ga0.9N layers, we have successfully achieved high performance on nitride-based p-i-n bandpass photodetectors. The peak responsivities were estimated to be 0.131, 0.129, and 0.13 A/W at 354, 357, and 356 nm for 60-, 150-, and 300-nm-thick p-Al0.1Ga0.9N blocking layer, respectively, corresponding to a quantum efficiency of around 46%. Moreover, spectral responsivity for 300-nm-thick blocking p-Al0.1Ga0.9N layer shows the narrowest bandpass characteristics from 320 to 365 nm (UV-A region). The photodetectors exhibit a 20-V break-down voltage and a small dark current of around 3 pA at 5-V reverse bias. For our 330 × 330 μm2 devices given bias of 0 V, the detectivity D* limited by Johnson noise are calculated to be 3.43 × 1013 6.77 × 1013, and 8.22 × 1013 cm - Hz0.5 W-1, respectively.
UR - https://www.scopus.com/pages/publications/26844462321
UR - https://www.scopus.com/pages/publications/26844462321#tab=citedBy
U2 - 10.1109/LPT.2005.854358
DO - 10.1109/LPT.2005.854358
M3 - Article
AN - SCOPUS:26844462321
SN - 1041-1135
VL - 17
SP - 2161
EP - 2163
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 10
ER -