The tunability in mechanical properties and fracture toughness of sputtered silicon oxynitride thin films for MEMS-based infrared detectors

I. Kuan Lin, Ping Hsin Wu, Kuang Shun Ou, Kuo Shen Chen, Xin Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents the mechanical characterization of the elastic modulus, hardness and fracture toughness of silicon oxynitride films (SiON) with different oxygen and nitrogen content, subjected to thermal annealing processed at 400 °C and 800 °C. The Fourier-transform infrared (FT-IR) spectroscopy was employed to characterize the SiON films with respect to the absorbance peak in the infrared spectrum. The nanoindentation testing showed that both the elastic modulus and hardness slightly increased after thermal annealing. Finally, the fracture toughness of the SiON films were estimated using Vickers micro-indentation tests and the result revealed that the fracture toughness decreased with increasing rapid thermal annealing (RTA) temperature and nitrogen content. We believe these results benefit microelectromechanical systems (MEMS) in regards to maintaining the structural integrity and improving reliability performance.

Original languageEnglish
Title of host publicationMicroelectromechanical Systems - Materials and Devices III
Pages123-128
Number of pages6
Publication statusPublished - 2010 Aug 30
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: 2009 Nov 302009 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1222
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period09-11-3009-12-04

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Lin, I. K., Wu, P. H., Ou, K. S., Chen, K. S., & Zhang, X. (2010). The tunability in mechanical properties and fracture toughness of sputtered silicon oxynitride thin films for MEMS-based infrared detectors. In Microelectromechanical Systems - Materials and Devices III (pp. 123-128). (Materials Research Society Symposium Proceedings; Vol. 1222).