The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes

Shui Jinn Wang; Shiue Lung Chen; Kai Ming Uang; Wei Chi Lee; Tron Min Chen; Chao Hsuing Chen; Bor Wen Liou

doi:10.1109/LPT.2006.873338

The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes

Shui Jinn Wang, Shiue Lung Chen, Kai Ming Uang, Wei Chi Lee, Tron Min Chen, Chao Hsuing Chen, Bor Wen Liou

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

In this study, the performance of vertical-structured high-power GaN-based light-emitting diodes (VM-LEDs) with a transparent and low-resistant indium-zinc oxide (IZO) film as a current spreading layer (CSL) was investigated. Nickel electroplating and patterned laser liftoff techniques were employed for the transfer of sapphire substrate to nickel substrate. The novel IZO CSL atop n-side-up VM-LEDs offering benefits of superior current spreading ability, larger extraction efficiency, and lower forward voltage drop was demonstrated. As compared to the regular LED without IZO CSL, the use of an IZO CSL with an optimum thickness of around 300 nm leads to an increase in light output power by 97.1 (67.8)% and a decrease in forward voltage drop by 4.9 (15.5)% under an injection current of 350 (800) mA.

Original language	English
Pages (from-to)	1146-1148
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2006.873338
Publication status	Published - 2006 May 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{b19bc9c1574442879693a743441241ac,

title = "The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes",

abstract = "In this study, the performance of vertical-structured high-power GaN-based light-emitting diodes (VM-LEDs) with a transparent and low-resistant indium-zinc oxide (IZO) film as a current spreading layer (CSL) was investigated. Nickel electroplating and patterned laser liftoff techniques were employed for the transfer of sapphire substrate to nickel substrate. The novel IZO CSL atop n-side-up VM-LEDs offering benefits of superior current spreading ability, larger extraction efficiency, and lower forward voltage drop was demonstrated. As compared to the regular LED without IZO CSL, the use of an IZO CSL with an optimum thickness of around 300 nm leads to an increase in light output power by 97.1 (67.8)% and a decrease in forward voltage drop by 4.9 (15.5)% under an injection current of 350 (800) mA.",

author = "Wang, {Shui Jinn} and Chen, {Shiue Lung} and Uang, {Kai Ming} and Lee, {Wei Chi} and Chen, {Tron Min} and Chen, {Chao Hsuing} and Liou, {Bor Wen}",

note = "Funding Information: Manuscript received December 12, 2005; revised February 14, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-93-2215-E-006-001.",

year = "2006",

month = may,

day = "15",

doi = "10.1109/LPT.2006.873338",

language = "English",

volume = "18",

pages = "1146--1148",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes. / Wang, Shui Jinn; Chen, Shiue Lung; Uang, Kai Ming; Lee, Wei Chi; Chen, Tron Min; Chen, Chao Hsuing; Liou, Bor Wen.

In: IEEE Photonics Technology Letters, Vol. 18, No. 10, 15.05.2006, p. 1146-1148.

Research output: Contribution to journal › Article › peer-review

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AU - Wang, Shui Jinn

AU - Chen, Shiue Lung

AU - Uang, Kai Ming

AU - Lee, Wei Chi

AU - Chen, Tron Min

AU - Chen, Chao Hsuing

AU - Liou, Bor Wen

N1 - Funding Information: Manuscript received December 12, 2005; revised February 14, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-93-2215-E-006-001.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - In this study, the performance of vertical-structured high-power GaN-based light-emitting diodes (VM-LEDs) with a transparent and low-resistant indium-zinc oxide (IZO) film as a current spreading layer (CSL) was investigated. Nickel electroplating and patterned laser liftoff techniques were employed for the transfer of sapphire substrate to nickel substrate. The novel IZO CSL atop n-side-up VM-LEDs offering benefits of superior current spreading ability, larger extraction efficiency, and lower forward voltage drop was demonstrated. As compared to the regular LED without IZO CSL, the use of an IZO CSL with an optimum thickness of around 300 nm leads to an increase in light output power by 97.1 (67.8)% and a decrease in forward voltage drop by 4.9 (15.5)% under an injection current of 350 (800) mA.

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