The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes

Shui Jinn Wang, Shiue Lung Chen, Kai Ming Uang, Wei Chi Lee, Tron Min Chen, Chao Hsuing Chen, Bor Wen Liou

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

In this study, the performance of vertical-structured high-power GaN-based light-emitting diodes (VM-LEDs) with a transparent and low-resistant indium-zinc oxide (IZO) film as a current spreading layer (CSL) was investigated. Nickel electroplating and patterned laser liftoff techniques were employed for the transfer of sapphire substrate to nickel substrate. The novel IZO CSL atop n-side-up VM-LEDs offering benefits of superior current spreading ability, larger extraction efficiency, and lower forward voltage drop was demonstrated. As compared to the regular LED without IZO CSL, the use of an IZO CSL with an optimum thickness of around 300 nm leads to an increase in light output power by 97.1 (67.8)% and a decrease in forward voltage drop by 4.9 (15.5)% under an injection current of 350 (800) mA.

Original languageEnglish
Pages (from-to)1146-1148
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number10
DOIs
Publication statusPublished - 2006 May 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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