The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement

Kai Ming Uang, Shui-Jinn Wang, Shiue Lung Chen, Tron Min Chen, Bor Wen Liou

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study, a low-resistant and high-transparent ohmic contact to p-GaN layer using an indium-zinc oxide (IZO)/(oxidized-Ni/Au) contact system was investigated to enhance light extraction of GaN-based light-emitting diodes (LEDs). Improvement in the light output of GaN-based blue LEDs as a function of the IZO film thickness was examined and an optimum thickness of around 300 nm has been found. Under an injection current in the 10-50 mA range, as compared to the case without IZO film, about 35-28% improvement in light output power (Lop) has been obtained. Comparisons of Lop and its reliability for LEDs with an IZO or indium-tin oxide transparent conduction layer were also made. In addition, compared to IZO/GaN samples without the patterned surface, the LEDs fabricated using a patterned IZO surface show a 23.1% improvement in Lop at 20 mA.

Original languageEnglish
Pages (from-to)2501-2506
Number of pages6
JournalThin Solid Films
Volume515
Issue number4
DOIs
Publication statusPublished - 2006 Dec 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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