By employing the commercial software nanoMos and Vienna ab Initio Simulation Package (VASP), the performance of nano-wire field-effect transistors is investigated. In this paper, the Density-Gradient Model (DG Model) is used to describe the carrier transport behavior of the nano-wire transistor under quantum effects. The analysis of the drain current with respect to channel length, body dielectric constant and gate contact work function is presented. In addition, Fermi energy and DOS (Density of State) are introduced to explore the relative stability of carrier transport and electrical conductance for the silicon crystal with dopants. Finally, how the roughness of the surface of the silicon-based crystal is affected by dopants and their allocation can be illuminated by a few broken bonds between atoms near the skin of the crystal.
|Number of pages||11|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2010 Jan 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)