Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

Yazeed Alaskar, Shamsul Arafin, Qiyin Lin, Darshana Wickramaratne, Jeff McKay, Andrew G. Norman, Zhi Zhang, Luchi Yao, Feng Ding, Jin Zou, Mark S. Goorsky, Roger K. Lake, Mark A. Zurbuchen, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (θ-2θ scan, ω-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smooth GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.

Original languageEnglish
Pages (from-to)268-273
Number of pages6
JournalJournal of Crystal Growth
Publication statusPublished - 2015 Jul 28

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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