Theoretical modeling of the thermoelectric figure of merit in Si/Si1-xGex quantum well structures

X. Sun, G. Chen, K. L. Wang, M. S. Dresselhaus

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

In bulk form, Si1-xGex is a promising thermoelectric material for high temperature applications. Evidence for the enhancement of the thermoelectric figure of merit in quantum well structures has been shown experimentally in the PbTe system. A model based on solving the Boltzmann transport equation for both the electronic and phonon transport in the in-plane direction of the quantum well is presented for thermoelectric phenomena in Si/Si1-xGex quantum well multilayers. The electronic transport is based on a detailed consideration of the band structure of Si and Si1-xGex in the presence of quantum confinement, and the phonon transport is solved by assuming that the interfaces reflect and transmit phonons on a partially diffuse and partially specular basis. It is shown that significant enhancement of the thermoelectric figure of merit in quantum well structures can be achieved in such a system. The temperature dependent transport properties are also discussed.

Original languageEnglish
Pages47-50
Number of pages4
Publication statusPublished - 1998
EventProceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn
Duration: 1998 May 241998 May 28

Conference

ConferenceProceedings of the 1998 17th International Conference on Thermoelectrics, ICT
CityNagoya, Jpn
Period98-05-2498-05-28

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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