In bulk form, Si1-xGex is a promising thermoelectric material for high temperature applications. Evidence for the enhancement of the thermoelectric figure of merit in quantum well structures has been shown experimentally in the PbTe system. A model based on solving the Boltzmann transport equation for both the electronic and phonon transport in the in-plane direction of the quantum well is presented for thermoelectric phenomena in Si/Si1-xGex quantum well multilayers. The electronic transport is based on a detailed consideration of the band structure of Si and Si1-xGex in the presence of quantum confinement, and the phonon transport is solved by assuming that the interfaces reflect and transmit phonons on a partially diffuse and partially specular basis. It is shown that significant enhancement of the thermoelectric figure of merit in quantum well structures can be achieved in such a system. The temperature dependent transport properties are also discussed.
|Number of pages||4|
|Publication status||Published - 1998|
|Event||Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn|
Duration: 1998 May 24 → 1998 May 28
|Conference||Proceedings of the 1998 17th International Conference on Thermoelectrics, ICT|
|Period||98-05-24 → 98-05-28|
All Science Journal Classification (ASJC) codes