Abstract
Performance of solar cells and modules at operating temperature relative to standard test conditions is primarily determined by the temperature dependence of VOC. Usually this dependence is analyzed by applying a simplistic semi-analytical equation to experimental data without complete understanding of the underlying mechanisms that affect the temperature coefficient dVOC/dT (VOC'). Unanswered questions related to the temperature dependence include: separating the contribution of interface vs. absorber recombination towards VOC', temperature coefficient comparison of homojunction vs. heterojunction silicon solar cells, and dependence of VOC' on inversion strength in heterojunction cells. We derive an analytical equation that provides the explicit dependence of VOC' on the material parameters and the strength of recombination. The role of recombination in different regions of the cell is exemplified by comparing two CuInGaSe devices with different bandgaps.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479979448 |
| DOIs | |
| Publication status | Published - 2015 Dec 14 |
| Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 2015 Jun 14 → 2015 Jun 19 |
Publication series
| Name | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
|---|
Other
| Other | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
|---|---|
| Country/Territory | United States |
| City | New Orleans |
| Period | 15-06-14 → 15-06-19 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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