Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices

Alexandre M. Nardes; Craig L. Perkins; Peter Graf; Jian V. Li; Sean E. Shaheen; David Ostrowski; Andrew Watte; Dana C. Olson; Nikos Kopidakis

doi:10.1109/PVSC.2014.6925457

Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices

Alexandre M. Nardes, Craig L. Perkins, Peter Graf, Jian V. Li, Sean E. Shaheen, David Ostrowski, Andrew Watte, Dana C. Olson, Nikos Kopidakis

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We demonstrate that a post-annealing step results in enhanced open-circuit voltage (V_oc) and fill factor (FF) and lower reverse saturation current (J_s) that consequently increases the power conversion efficiency (PCE) of organic bulk-heterojunction (BHJ) devices by about 40 % as a result of better contact formation, as typically assumed. Although true, we show that additional device properties are affected as well. We found that annealing induces vertical phase segregation and consequently the enrichment of donor and acceptor materials at the correct electrical contact. In addition, a de-doping process and a decrease in defect density also take place and are the major causes for device improvement after post-annealing the OPV devices. Implications for OPV basic research and manufacturing are discussed.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2575-2580
Number of pages	6
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925457
Publication status	Published - 2014 Oct 15
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 2014 Jun 8 → 2014 Jun 13

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	14-06-08 → 14-06-13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6925457

Cite this

Nardes, A. M., Perkins, C. L., Graf, P., Li, J. V., Shaheen, S. E., Ostrowski, D., Watte, A., Olson, D. C., & Kopidakis, N. (2014). Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2575-2580). Article 6925457 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925457

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title = "Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices",

abstract = "We demonstrate that a post-annealing step results in enhanced open-circuit voltage (Voc) and fill factor (FF) and lower reverse saturation current (Js) that consequently increases the power conversion efficiency (PCE) of organic bulk-heterojunction (BHJ) devices by about 40 % as a result of better contact formation, as typically assumed. Although true, we show that additional device properties are affected as well. We found that annealing induces vertical phase segregation and consequently the enrichment of donor and acceptor materials at the correct electrical contact. In addition, a de-doping process and a decrease in defect density also take place and are the major causes for device improvement after post-annealing the OPV devices. Implications for OPV basic research and manufacturing are discussed.",

author = "Nardes, {Alexandre M.} and Perkins, {Craig L.} and Peter Graf and Li, {Jian V.} and Shaheen, {Sean E.} and David Ostrowski and Andrew Watte and Olson, {Dana C.} and Nikos Kopidakis",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925457",

language = "English",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Nardes, AM, Perkins, CL, Graf, P, Li, JV, Shaheen, SE, Ostrowski, D, Watte, A, Olson, DC & Kopidakis, N 2014, Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925457, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 2575-2580, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 14-06-08. https://doi.org/10.1109/PVSC.2014.6925457

Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices. / Nardes, Alexandre M.; Perkins, Craig L.; Graf, Peter et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2575-2580 6925457 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices

AU - Nardes, Alexandre M.

AU - Perkins, Craig L.

AU - Graf, Peter

AU - Li, Jian V.

AU - Shaheen, Sean E.

AU - Ostrowski, David

AU - Watte, Andrew

AU - Olson, Dana C.

AU - Kopidakis, Nikos

PY - 2014/10/15

Y1 - 2014/10/15

N2 - We demonstrate that a post-annealing step results in enhanced open-circuit voltage (Voc) and fill factor (FF) and lower reverse saturation current (Js) that consequently increases the power conversion efficiency (PCE) of organic bulk-heterojunction (BHJ) devices by about 40 % as a result of better contact formation, as typically assumed. Although true, we show that additional device properties are affected as well. We found that annealing induces vertical phase segregation and consequently the enrichment of donor and acceptor materials at the correct electrical contact. In addition, a de-doping process and a decrease in defect density also take place and are the major causes for device improvement after post-annealing the OPV devices. Implications for OPV basic research and manufacturing are discussed.

AB - We demonstrate that a post-annealing step results in enhanced open-circuit voltage (Voc) and fill factor (FF) and lower reverse saturation current (Js) that consequently increases the power conversion efficiency (PCE) of organic bulk-heterojunction (BHJ) devices by about 40 % as a result of better contact formation, as typically assumed. Although true, we show that additional device properties are affected as well. We found that annealing induces vertical phase segregation and consequently the enrichment of donor and acceptor materials at the correct electrical contact. In addition, a de-doping process and a decrease in defect density also take place and are the major causes for device improvement after post-annealing the OPV devices. Implications for OPV basic research and manufacturing are discussed.

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BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

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ER -

Nardes AM, Perkins CL, Graf P, Li JV, Shaheen SE, Ostrowski D et al. Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2575-2580. 6925457. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925457

Thermal annealing affects vertical morphology, doping and defect density in BHJ OPV devices

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