Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)

Gufeng He; Yongfang Li; Tzung-Fang Guo; Yang Yang

doi:10.1016/S0379-6779(02)01135-9

Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)

Gufeng He, Yongfang Li, Tzung-Fang Guo, Yang Yang

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

Poly(9,9′-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100 °C, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.

Original language	English
Pages (from-to)	1091-1092
Number of pages	2
Journal	Synthetic Metals
Volume	137
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(02)01135-9
Publication status	Published - 2003 Apr 4
Event	ICSM 2002 - Shanghai, China Duration: 2002 Jun 29 → 2002 Jul 5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)",

abstract = "Poly(9,9′-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100 °C, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.",

author = "Gufeng He and Yongfang Li and Tzung-Fang Guo and Yang Yang",

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T1 - Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)

AU - He, Gufeng

AU - Li, Yongfang

AU - Guo, Tzung-Fang

AU - Yang, Yang

PY - 2003/4/4

Y1 - 2003/4/4

N2 - Poly(9,9′-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100 °C, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.

AB - Poly(9,9′-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100 °C, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.

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VL - 137

SP - 1091

EP - 1092

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

T2 - ICSM 2002

Y2 - 29 June 2002 through 5 July 2002

ER -

Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)

Abstract

All Science Journal Classification (ASJC) codes

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