Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)

Gufeng He, Yongfang Li, Tzung-Fang Guo, Yang Yang

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Poly(9,9′-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100 °C, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.

Original languageEnglish
Pages (from-to)1091-1092
Number of pages2
JournalSynthetic Metals
Volume137
Issue number1-3
DOIs
Publication statusPublished - 2003 Apr 4
EventICSM 2002 - Shanghai, China
Duration: 2002 Jun 292002 Jul 5

Fingerprint

Surface structure
Fourier transform infrared spectroscopy
Light emitting diodes
Photoluminescence
Polymers
light emitting diodes
Annealing
annealing
Temperature
infrared spectroscopy
photoluminescence
polymers
Hot Temperature
fluorene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "Poly(9,9′-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100 °C, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.",
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Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene). / He, Gufeng; Li, Yongfang; Guo, Tzung-Fang; Yang, Yang.

In: Synthetic Metals, Vol. 137, No. 1-3, 04.04.2003, p. 1091-1092.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)

AU - He, Gufeng

AU - Li, Yongfang

AU - Guo, Tzung-Fang

AU - Yang, Yang

PY - 2003/4/4

Y1 - 2003/4/4

N2 - Poly(9,9′-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100 °C, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.

AB - Poly(9,9′-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100 °C, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.

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SP - 1091

EP - 1092

JO - Synthetic Metals

JF - Synthetic Metals

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