Thermal conductivity of Si/Ge quantum dot superlattices

Alexander Khitun; Jianlin Liu; Kang L. Wang

Thermal conductivity of Si/Ge quantum dot superlattices

Alexander Khitun, Jianlin Liu, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present both theoretical and experimental study of the lattice thermal conductivity in Si/Ge quantum dot superlattices (QDS). Our developed formalism takes into account thermal phonon scattering on quantum dots and allows us to predict with good accuracy (∼5%) lattice thermal conductivity modification in QDS compared to the bulk material. According to the theoretical model, the design of quantum dot composition, size and arrangement may be used for the effective control of QDS thermal properties. The results of numerical simulations are in a good agreement with experimental data obtained for Si/Ge QDS. The developed formalism is applicable for a wide range of semiconductor QDSs.

Original language	English
Title of host publication	2004 4th IEEE Conference on Nanotechnology
Pages	20-22
Number of pages	3
Publication status	Published - 2004
Event	2004 4th IEEE Conference on Nanotechnology - Munich, Germany Duration: 2004 Aug 16 → 2004 Aug 19

Publication series

Name	2004 4th IEEE Conference on Nanotechnology

Other

Other	2004 4th IEEE Conference on Nanotechnology
Country/Territory	Germany
City	Munich
Period	04-08-16 → 04-08-19

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Thermal conductivity of Si/Ge quantum dot superlattices",

abstract = "We present both theoretical and experimental study of the lattice thermal conductivity in Si/Ge quantum dot superlattices (QDS). Our developed formalism takes into account thermal phonon scattering on quantum dots and allows us to predict with good accuracy (∼5%) lattice thermal conductivity modification in QDS compared to the bulk material. According to the theoretical model, the design of quantum dot composition, size and arrangement may be used for the effective control of QDS thermal properties. The results of numerical simulations are in a good agreement with experimental data obtained for Si/Ge QDS. The developed formalism is applicable for a wide range of semiconductor QDSs.",

author = "Alexander Khitun and Jianlin Liu and Wang, {Kang L.}",

year = "2004",

language = "English",

isbn = "0780385365",

series = "2004 4th IEEE Conference on Nanotechnology",

pages = "20--22",

booktitle = "2004 4th IEEE Conference on Nanotechnology",

}

TY - GEN

T1 - Thermal conductivity of Si/Ge quantum dot superlattices

AU - Khitun, Alexander

AU - Liu, Jianlin

AU - Wang, Kang L.

PY - 2004

Y1 - 2004

N2 - We present both theoretical and experimental study of the lattice thermal conductivity in Si/Ge quantum dot superlattices (QDS). Our developed formalism takes into account thermal phonon scattering on quantum dots and allows us to predict with good accuracy (∼5%) lattice thermal conductivity modification in QDS compared to the bulk material. According to the theoretical model, the design of quantum dot composition, size and arrangement may be used for the effective control of QDS thermal properties. The results of numerical simulations are in a good agreement with experimental data obtained for Si/Ge QDS. The developed formalism is applicable for a wide range of semiconductor QDSs.

AB - We present both theoretical and experimental study of the lattice thermal conductivity in Si/Ge quantum dot superlattices (QDS). Our developed formalism takes into account thermal phonon scattering on quantum dots and allows us to predict with good accuracy (∼5%) lattice thermal conductivity modification in QDS compared to the bulk material. According to the theoretical model, the design of quantum dot composition, size and arrangement may be used for the effective control of QDS thermal properties. The results of numerical simulations are in a good agreement with experimental data obtained for Si/Ge QDS. The developed formalism is applicable for a wide range of semiconductor QDSs.

UR - http://www.scopus.com/inward/record.url?scp=20344371740&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20344371740&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:20344371740

SN - 0780385365

SN - 9780780385368

T3 - 2004 4th IEEE Conference on Nanotechnology

SP - 20

EP - 22

BT - 2004 4th IEEE Conference on Nanotechnology

T2 - 2004 4th IEEE Conference on Nanotechnology

Y2 - 16 August 2004 through 19 August 2004

ER -

Thermal conductivity of Si/Ge quantum dot superlattices

Abstract

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