Thermal conductivity of Si/Ge quantum dot superlattices

Alexander Khitun, Jianlin Liu, Kang L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present both theoretical and experimental study of the lattice thermal conductivity in Si/Ge quantum dot superlattices (QDS). Our developed formalism takes into account thermal phonon scattering on quantum dots and allows us to predict with good accuracy (∼5%) lattice thermal conductivity modification in QDS compared to the bulk material. According to the theoretical model, the design of quantum dot composition, size and arrangement may be used for the effective control of QDS thermal properties. The results of numerical simulations are in a good agreement with experimental data obtained for Si/Ge QDS. The developed formalism is applicable for a wide range of semiconductor QDSs.

Original languageEnglish
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages20-22
Number of pages3
Publication statusPublished - 2004
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: 2004 Aug 162004 Aug 19

Publication series

Name2004 4th IEEE Conference on Nanotechnology

Other

Other2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period04-08-1604-08-19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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