Abstract
We have considered effects of spatial confinement of acoustic phonons on silicon thermal conductivity and thermal management of ultra-thin silicon-on-insulator (SOI) structures. It has been shown that modification of the phonon modes in thin silicon layers (10 nm -100 nm) sandwiched between two layers of silicon dioxide leads to a significant increase of the phonon relaxation rates and corresponding drop of lateral lattice thermal conductivity. The latter may bring about additional degradation in the electrostatic discharge (ESD) failure voltage for ultra-thin SOI devices. Obtained results help to realize the importance of proper thermal management of ultra-thin SOI based devices. Our theoretical and numerical results are consistent with recent experimental measurements of lateral thermal conductivity.
Original language | English |
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Pages (from-to) | 135-142 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3630 |
DOIs | |
Publication status | Published - 1999 |
Event | Proceedings of the 1999 Silicon-based Optoelectronics - San Jose, CA, USA Duration: 1999 Jan 27 → 1999 Jan 28 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering