Thermal management of ultra-thin SOI devices: effects of phonon confinement

Alexander Balandin, Yin Sheng Tang, Kang L. Wang

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We have considered effects of spatial confinement of acoustic phonons on silicon thermal conductivity and thermal management of ultra-thin silicon-on-insulator (SOI) structures. It has been shown that modification of the phonon modes in thin silicon layers (10 nm -100 nm) sandwiched between two layers of silicon dioxide leads to a significant increase of the phonon relaxation rates and corresponding drop of lateral lattice thermal conductivity. The latter may bring about additional degradation in the electrostatic discharge (ESD) failure voltage for ultra-thin SOI devices. Obtained results help to realize the importance of proper thermal management of ultra-thin SOI based devices. Our theoretical and numerical results are consistent with recent experimental measurements of lateral thermal conductivity.

Original languageEnglish
Pages (from-to)135-142
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3630
DOIs
Publication statusPublished - 1999
EventProceedings of the 1999 Silicon-based Optoelectronics - San Jose, CA, USA
Duration: 1999 Jan 271999 Jan 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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