Abstract
The properties of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been widely investigated. In this paper, a-Si:H films were prepared by high-density plasma chemical vapor deposition (HDP-CVD) with high power density of 3.18 W/cm2 and high deposition rate of 2.6 nm/s. The correlation between the characteristics of Si-Hn bonds and annealing temperature was investigated. Furthermore, the variation of the film stress against temperature that correlates to the hydrogen desorption at different stages during thermal annealing has also been studied in this work. The FTIR spectra show that Si-Hn bond almost disappeared when annealed above 400 °C, and the film started to condense. On the other hand, thermal desorption spectra (TDS) resulted in the Si-Hn bond breaking at during about 300-600 °C and the behavior of H2 desorption remaining the same as the stress variation.
| Original language | English |
|---|---|
| Pages (from-to) | 648-652 |
| Number of pages | 5 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 69 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 2008 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
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Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition. / Hsiao, Wen Chu; Liu, Chuan-Pu; Wang, Ying Lang.
In: Journal of Physics and Chemistry of Solids, Vol. 69, No. 2-3, 01.02.2008, p. 648-652.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition
AU - Hsiao, Wen Chu
AU - Liu, Chuan-Pu
AU - Wang, Ying Lang
PY - 2008/2/1
Y1 - 2008/2/1
N2 - The properties of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been widely investigated. In this paper, a-Si:H films were prepared by high-density plasma chemical vapor deposition (HDP-CVD) with high power density of 3.18 W/cm2 and high deposition rate of 2.6 nm/s. The correlation between the characteristics of Si-Hn bonds and annealing temperature was investigated. Furthermore, the variation of the film stress against temperature that correlates to the hydrogen desorption at different stages during thermal annealing has also been studied in this work. The FTIR spectra show that Si-Hn bond almost disappeared when annealed above 400 °C, and the film started to condense. On the other hand, thermal desorption spectra (TDS) resulted in the Si-Hn bond breaking at during about 300-600 °C and the behavior of H2 desorption remaining the same as the stress variation.
AB - The properties of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been widely investigated. In this paper, a-Si:H films were prepared by high-density plasma chemical vapor deposition (HDP-CVD) with high power density of 3.18 W/cm2 and high deposition rate of 2.6 nm/s. The correlation between the characteristics of Si-Hn bonds and annealing temperature was investigated. Furthermore, the variation of the film stress against temperature that correlates to the hydrogen desorption at different stages during thermal annealing has also been studied in this work. The FTIR spectra show that Si-Hn bond almost disappeared when annealed above 400 °C, and the film started to condense. On the other hand, thermal desorption spectra (TDS) resulted in the Si-Hn bond breaking at during about 300-600 °C and the behavior of H2 desorption remaining the same as the stress variation.
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UR - http://www.scopus.com/inward/citedby.url?scp=38749135833&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2007.07.095
DO - 10.1016/j.jpcs.2007.07.095
M3 - Article
VL - 69
SP - 648
EP - 652
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 2-3
ER -