Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition

Wen Chu Hsiao, Chuan-Pu Liu, Ying Lang Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The properties of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been widely investigated. In this paper, a-Si:H films were prepared by high-density plasma chemical vapor deposition (HDP-CVD) with high power density of 3.18 W/cm2 and high deposition rate of 2.6 nm/s. The correlation between the characteristics of Si-Hn bonds and annealing temperature was investigated. Furthermore, the variation of the film stress against temperature that correlates to the hydrogen desorption at different stages during thermal annealing has also been studied in this work. The FTIR spectra show that Si-Hn bond almost disappeared when annealed above 400 °C, and the film started to condense. On the other hand, thermal desorption spectra (TDS) resulted in the Si-Hn bond breaking at during about 300-600 °C and the behavior of H2 desorption remaining the same as the stress variation.

Original languageEnglish
Pages (from-to)648-652
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number2-3
DOIs
Publication statusPublished - 2008 Feb 1

Fingerprint

Plasma density
Amorphous silicon
plasma density
amorphous silicon
Chemical vapor deposition
Thermodynamic properties
thermodynamic properties
desorption
vapor deposition
Desorption
Annealing
Thermal desorption
annealing
Plasma enhanced chemical vapor deposition
Deposition rates
radiant flux density
Hydrogen
Temperature
temperature
hydrogen

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "The properties of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been widely investigated. In this paper, a-Si:H films were prepared by high-density plasma chemical vapor deposition (HDP-CVD) with high power density of 3.18 W/cm2 and high deposition rate of 2.6 nm/s. The correlation between the characteristics of Si-Hn bonds and annealing temperature was investigated. Furthermore, the variation of the film stress against temperature that correlates to the hydrogen desorption at different stages during thermal annealing has also been studied in this work. The FTIR spectra show that Si-Hn bond almost disappeared when annealed above 400 °C, and the film started to condense. On the other hand, thermal desorption spectra (TDS) resulted in the Si-Hn bond breaking at during about 300-600 °C and the behavior of H2 desorption remaining the same as the stress variation.",
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Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition. / Hsiao, Wen Chu; Liu, Chuan-Pu; Wang, Ying Lang.

In: Journal of Physics and Chemistry of Solids, Vol. 69, No. 2-3, 01.02.2008, p. 648-652.

Research output: Contribution to journalArticle

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AU - Hsiao, Wen Chu

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N2 - The properties of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been widely investigated. In this paper, a-Si:H films were prepared by high-density plasma chemical vapor deposition (HDP-CVD) with high power density of 3.18 W/cm2 and high deposition rate of 2.6 nm/s. The correlation between the characteristics of Si-Hn bonds and annealing temperature was investigated. Furthermore, the variation of the film stress against temperature that correlates to the hydrogen desorption at different stages during thermal annealing has also been studied in this work. The FTIR spectra show that Si-Hn bond almost disappeared when annealed above 400 °C, and the film started to condense. On the other hand, thermal desorption spectra (TDS) resulted in the Si-Hn bond breaking at during about 300-600 °C and the behavior of H2 desorption remaining the same as the stress variation.

AB - The properties of hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) have been widely investigated. In this paper, a-Si:H films were prepared by high-density plasma chemical vapor deposition (HDP-CVD) with high power density of 3.18 W/cm2 and high deposition rate of 2.6 nm/s. The correlation between the characteristics of Si-Hn bonds and annealing temperature was investigated. Furthermore, the variation of the film stress against temperature that correlates to the hydrogen desorption at different stages during thermal annealing has also been studied in this work. The FTIR spectra show that Si-Hn bond almost disappeared when annealed above 400 °C, and the film started to condense. On the other hand, thermal desorption spectra (TDS) resulted in the Si-Hn bond breaking at during about 300-600 °C and the behavior of H2 desorption remaining the same as the stress variation.

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