Thermal reaction of Ta thin films with polycrystalline diamond

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Abstract

The thermal reaction of sputter-deposited Ta thin films with polycrystalline CVD-grown diamond substrates at temperatures between 700°C and 1100°C for 1 h is investigated by MeV He backscattering spectrometry, X-ray diffraction, and scanning electron microscopy. The product phases are polycrystalline Ta2C at 900°C and TaC at 1000°C with an initially 135nm thick Ta film. The first phase formed conforms to the rule of Bené for metal-metal bilayers. No coexistence of Ta2C and TaC is observed during reaction. The second phase formed, TaC, is in thermodynamic equilibrium with carbon.

Original languageEnglish
Pages (from-to)72-76
Number of pages5
JournalThin Solid Films
Volume236
Issue number1-2
DOIs
Publication statusPublished - 1993 Dec 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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