Thermal Reactions of Fluorocarbon and Hydrofluorocarbon Species on Si(100)-(2x1)-CF3l, CF3CH2I, and C2F4

Jong-Liang Lin, John T. Yates

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13 Citations (Scopus)

Abstract

The thermal reactions of CF3I, CF3CH2I, and C2F4are studied by temperature-programmed reaction/ desorption (TPR/D) on a Si(100) surface. CF3I, CF3CH2I dissociate on the surface, whereas C2F4adsorbs reversibly, without dissociation. Dissociation of the iodine-containing molecules is probably initiated by the cleavage of the relatively weak C-I bonds. In the case of CF3I, the C-I bond dissociation generates 1(a) and CF3(a). 1(a) desorbs as atomic I. CF3(a) dissociates in sequence, producing gas phase SiF2and SiF4and a carbon deposit on the surface. In the case of CF3CH2I, the C-I bond dissociation generates 1(a) and CF3CH2(a). CF3CH2(a) undergoes (3-F elimination to form gas phase CF2CH2as well as further decomposition on the surface. At higher temperatures H2, I, HI, and SiF2desorb and carbon deposits on the surface.

Original languageEnglish
Pages (from-to)178-182
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number2
DOIs
Publication statusPublished - 1995 Jan 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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