The thermal reactions of CF3I, CF3CH2I, and C2F4are studied by temperature-programmed reaction/ desorption (TPR/D) on a Si(100) surface. CF3I, CF3CH2I dissociate on the surface, whereas C2F4adsorbs reversibly, without dissociation. Dissociation of the iodine-containing molecules is probably initiated by the cleavage of the relatively weak C-I bonds. In the case of CF3I, the C-I bond dissociation generates 1(a) and CF3(a). 1(a) desorbs as atomic I. CF3(a) dissociates in sequence, producing gas phase SiF2and SiF4and a carbon deposit on the surface. In the case of CF3CH2I, the C-I bond dissociation generates 1(a) and CF3CH2(a). CF3CH2(a) undergoes (3-F elimination to form gas phase CF2CH2as well as further decomposition on the surface. At higher temperatures H2, I, HI, and SiF2desorb and carbon deposits on the surface.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1995 Jan 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films