Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1 - xGex multiple quantum wells

B. Adoram, D. Krapf, J. Shappir, A. Sa'ar, M. Levy, R. Beserman, S. G. Thomas, K. L. Wang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Thermal relaxation processes due to strain relaxation and Si/Ge interdiffusion were investigated in pseudomorphic p-type SiGe/Si quantum wells using infrared-polarization-resolved absorption spectroscopy. The samples were annealed from room temperature up to 1060°C and intersubband transitions between the lowest heavy-hole states and inter-valence-band transitions between heavy-hole and spin-split-off hole states were utilized to probe thermal activation processes. The strain relaxation process is activated at temperatures above 750°C and causes a decrease of the intersubband absorption and an increase of the inter-valence-band absorption. At temperatures above 940°C, we found that a second process of Si/Ge interdiffusion causes a reduction of all absorption lines in the spectrum. We proposed a simple model that provides a qualitative explanation to the above results.

Original languageEnglish
Pages (from-to)2232-2234
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number15
DOIs
Publication statusPublished - 1999 Oct 11

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si<sub>1 - x</sub>Ge<sub>x</sub> multiple quantum wells'. Together they form a unique fingerprint.

Cite this