Thermal reliability and characterization of InGaP schottky contact with Ti/Pt/Au metals

Ching Ting Lee, Hung Pin Shiao, Nien Tze Yeh, Chang Da Tsai, Yen Tang Lyu, Yuan Kuang Tu

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35 Citations (Scopus)


We present the characteristics of Ti/Pt/Au Schottky contacts on wide bandgap InGaP semiconductors with surface pre-treatment before Schottky contact deposition, and investigate the influence of post heat treatment on Schottky diodes. With the pre-deposition surface etching by dilute HCl, dilute NH4OH, or buffer oxide etchant (BOE), the performance of Schottky diodes compared with samples without surface pre-treatment is improved significantly. Auger electron spectroscopy (AES) analysis of the thermally annealed Schottky diode has been performed to investigate the failure mechanism. No significant change was found for samples annealed up to 450°C. However, a drastic degradation of the barrier height and the ideality factor was observed in samples annealed at 500°C, which may be caused by the interdiffusion and penetration of metals into the semiconductor.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalSolid-State Electronics
Issue number1
Publication statusPublished - 1997 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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