Thermal reliability and performances of InGaP Schottky contact with Cu/Au and Au/Cu-MSM photodetectors

Chang Da Tsai, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We report the Schottky performance and thermal reliability of a wide bandgap InGaP layer in contact with a Cu/Au metallic system. An effective Schottky barrier height of 0.97 eV and an ideality factor of 1.21 can be achieved. The thermal reliability of the resultant Schottky barrier diodes was analyzed using Auger electron spectroscopy and atomic force microscopy. The thermal reliability could be maintained up to 450 °C. The failure mechanism was attributable to the decomposition of the InGaP layer and the interdiffusion of the chemical elements at higher temperature. Insensitive photoresponsivity with the incident optical power was found for the resultant Au/Cu-metal-semiconductor-metal-photodetectors (MSM-PDs). According to the measured temporal response of the Au/Cu-MSM-PDs, the operation frequency could be above 10 GHz.

Original languageEnglish
Pages (from-to)59-64
Number of pages6
JournalJournal of Electronic Materials
Volume30
Issue number2
DOIs
Publication statusPublished - 2001 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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