Thermal stability and bonding interface in Cu/SiO₂hybrid bonding on nano-Twinned copper

Engineering

• Indentation 100%
• Three Dimensional Integrated Circuits 50%
• Silicon Dioxide 50%
• Scanning Electron Microscope 50%
• Interconnects 50%
• Temperature Increase 50%
• Penetration Depth 50%
• Focused Ion Beam 50%
• Average Grain Size 50%
• Bonding Material 50%
• Bonding Temperature 50%
• Grain Coarsening 50%

Material Science

• Thermal Stability 100%
• Nanoindentation 66%
• Electronic Circuit 33%
• Electron Backscatter Diffraction 33%
• Scanning Electron Microscopy 33%
• Coarsening 33%
• Grain Size 33%
• Focused Ion Beam 33%
• Microstructural Analysis 33%

Keyphrases

• Cu/SiO2hybrid Bonding 100%