TY - JOUR
T1 - Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
AU - Lai, Po Hsien
AU - Fu, Ssu I.
AU - Tsai, Yan Ying
AU - Yen, Chih Hung
AU - Chuang, Hung Ming
AU - Cheng, Shiou Ying
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received April 14, 2005; revised August 15, 2005. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC-94-2215-E-006-060 and Contract 94-2215-E-197-002.
PY - 2006/3
Y1 - 2006/3
N2 - The temperature-dependent characteristics of an InGaP/InGaAs/GaAs heterstructure field-effect transistor (HFET), using the (NH4) 2SX solution to form the InGaP surface passivation, are studied and demonstrated. The sulfur-passivated device shows significantly improved dc and RF performances over a wide temperature range (300-510 K). With a 1 × 100 - μm2 gate-dimension HFET by (NH4) 2Sx treatment, the considerably improved thermal stability over dc performances including lower temperature variation coefficients on the turn-on voltage (-1.23 mV/K), the gate-drain breakdown voltage (-0.05 mV/K), the gate leakage current (1.04 μA/mm · K), the threshold voltage (-1.139 mV/K), and the drain-saturation-current operating regimes (-3.11 × 10 -4/K) are obtained as the temperature is increased from 300 to 510 K. In addition, for RF characteristics, the sulfur-passivated device also shows a low degradation rate on drain-saturation-current operating regimes (-3.29 × 10-4/K) as the temperature is increased from 300 to 400 K. These advantages provide the promise for high-speed high-frequency high-temperature electronics applications.
AB - The temperature-dependent characteristics of an InGaP/InGaAs/GaAs heterstructure field-effect transistor (HFET), using the (NH4) 2SX solution to form the InGaP surface passivation, are studied and demonstrated. The sulfur-passivated device shows significantly improved dc and RF performances over a wide temperature range (300-510 K). With a 1 × 100 - μm2 gate-dimension HFET by (NH4) 2Sx treatment, the considerably improved thermal stability over dc performances including lower temperature variation coefficients on the turn-on voltage (-1.23 mV/K), the gate-drain breakdown voltage (-0.05 mV/K), the gate leakage current (1.04 μA/mm · K), the threshold voltage (-1.139 mV/K), and the drain-saturation-current operating regimes (-3.11 × 10 -4/K) are obtained as the temperature is increased from 300 to 510 K. In addition, for RF characteristics, the sulfur-passivated device also shows a low degradation rate on drain-saturation-current operating regimes (-3.29 × 10-4/K) as the temperature is increased from 300 to 400 K. These advantages provide the promise for high-speed high-frequency high-temperature electronics applications.
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U2 - 10.1109/TDMR.2006.870348
DO - 10.1109/TDMR.2006.870348
M3 - Article
AN - SCOPUS:33645814023
SN - 1530-4388
VL - 6
SP - 52
EP - 58
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 1
ER -