TY - JOUR
T1 - Thermal stability of Cu/TiN and Cu/Ti/TiN metallizations on silicon
AU - Chen, J. S.
AU - Lu, K. Y.
N1 - Funding Information:
We like to thank Prof. K.L. Lin for providing the deposition facility and thank C.J. Yang and Prof. H.C. Cheng at National Chiao Tung University for help in fabricating shallow junction diodes. Financial support for this work was provided by the National Science Council of Taiwan, ROC (contract no. NSC 87-2215-E-006-014).
PY - 2001/9/21
Y1 - 2001/9/21
N2 - The thermal stability of Cu/TiN and Cu/Ti/TiN metallizations on Si, before and after annealing at 450-750°C, was investigated. No change in sheet resistance and reverse-bias diode leakage current was observed for both systems after annealing up to 650°C. After annealing at 750°C, sheet resistance of Cu/TiN/〈Si〉 was doubled and formation of Cu3Si was observed by X-ray diffraction; on the contrary, the sheet resistance of the Cu/Ti/TiN/〈Si〉 sample remains unchanged and no Cu3Si is detected. By the same annealing, leakage current density of the diodes with Cu/TiN metallization increases by three orders of magnitude, and the value for diodes with Cu/Ti/TiN metallization also increases, but only by two orders of magnitude. The additional Ti layer thus improves the metallurgical and sheet resistance stability but it cannot completely prevent the diode leakage at high temperature.
AB - The thermal stability of Cu/TiN and Cu/Ti/TiN metallizations on Si, before and after annealing at 450-750°C, was investigated. No change in sheet resistance and reverse-bias diode leakage current was observed for both systems after annealing up to 650°C. After annealing at 750°C, sheet resistance of Cu/TiN/〈Si〉 was doubled and formation of Cu3Si was observed by X-ray diffraction; on the contrary, the sheet resistance of the Cu/Ti/TiN/〈Si〉 sample remains unchanged and no Cu3Si is detected. By the same annealing, leakage current density of the diodes with Cu/TiN metallization increases by three orders of magnitude, and the value for diodes with Cu/Ti/TiN metallization also increases, but only by two orders of magnitude. The additional Ti layer thus improves the metallurgical and sheet resistance stability but it cannot completely prevent the diode leakage at high temperature.
UR - https://www.scopus.com/pages/publications/0035928986
UR - https://www.scopus.com/pages/publications/0035928986#tab=citedBy
U2 - 10.1016/s0040-6090(01)01186-5
DO - 10.1016/s0040-6090(01)01186-5
M3 - Article
AN - SCOPUS:0035928986
SN - 0040-6090
VL - 396
SP - 205
EP - 209
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -