Thermal stability of hafnium and hafnium nitride gates on HfO2 gate dielectrics

Chih Huang Tsai; Yi Sheng Lai; J. S. Chen

doi:10.1016/j.jallcom.2009.08.040

Thermal stability of hafnium and hafnium nitride gates on HfO₂ gate dielectrics

Chih Huang Tsai, Yi Sheng Lai, J. S. Chen

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The dependence of the material and electrical properties of HfN_x films on the nitrogen flow ratio has been investigated in this work. After annealing at 400 °C in the forming gas, the sputtered Hf thin film oxidizes, but the composition of the sputtered HfN_1.0 and HfN_1.3 thin films remains unchanged. In the case of the Hf/HfO₂/Si structure, it is found that (1) oxygen diffuses from the film surface to the silicon substrate, and (2) oxygen is incorporated into the bulk of the Hf film by reduction of the underlying HfO₂ film, after annealing at 400 °C. The results suggest that HfN_1.3 is a poorer oxygen diffusion barrier than HfN_1.0, and reveal that HfN_1.0/HfO₂/Si MOS capacitors possess better thermal stability than Hf/HfO₂/Si and HfN_1.3/HfO₂/Si capacitors.

Original language	English
Pages (from-to)	687-692
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	487
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2009.08.040
Publication status	Published - 2009 Nov 13

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2009.08.040

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title = "Thermal stability of hafnium and hafnium nitride gates on HfO2 gate dielectrics",

abstract = "The dependence of the material and electrical properties of HfNx films on the nitrogen flow ratio has been investigated in this work. After annealing at 400 °C in the forming gas, the sputtered Hf thin film oxidizes, but the composition of the sputtered HfN1.0 and HfN1.3 thin films remains unchanged. In the case of the Hf/HfO2/Si structure, it is found that (1) oxygen diffuses from the film surface to the silicon substrate, and (2) oxygen is incorporated into the bulk of the Hf film by reduction of the underlying HfO2 film, after annealing at 400 °C. The results suggest that HfN1.3 is a poorer oxygen diffusion barrier than HfN1.0, and reveal that HfN1.0/HfO2/Si MOS capacitors possess better thermal stability than Hf/HfO2/Si and HfN1.3/HfO2/Si capacitors.",

author = "Tsai, {Chih Huang} and Lai, {Yi Sheng} and Chen, {J. S.}",

note = "Funding Information: The authors gratefully acknowledge financial support from the National Science Council of Taiwan grant no. NSC 96–2628-E-006–012-MY3 and Applied Materials, Taiwan .",

year = "2009",

month = nov,

day = "13",

doi = "10.1016/j.jallcom.2009.08.040",

language = "English",

volume = "487",

pages = "687--692",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

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TY - JOUR

T1 - Thermal stability of hafnium and hafnium nitride gates on HfO2 gate dielectrics

AU - Tsai, Chih Huang

AU - Lai, Yi Sheng

AU - Chen, J. S.

N1 - Funding Information: The authors gratefully acknowledge financial support from the National Science Council of Taiwan grant no. NSC 96–2628-E-006–012-MY3 and Applied Materials, Taiwan .

PY - 2009/11/13

Y1 - 2009/11/13

N2 - The dependence of the material and electrical properties of HfNx films on the nitrogen flow ratio has been investigated in this work. After annealing at 400 °C in the forming gas, the sputtered Hf thin film oxidizes, but the composition of the sputtered HfN1.0 and HfN1.3 thin films remains unchanged. In the case of the Hf/HfO2/Si structure, it is found that (1) oxygen diffuses from the film surface to the silicon substrate, and (2) oxygen is incorporated into the bulk of the Hf film by reduction of the underlying HfO2 film, after annealing at 400 °C. The results suggest that HfN1.3 is a poorer oxygen diffusion barrier than HfN1.0, and reveal that HfN1.0/HfO2/Si MOS capacitors possess better thermal stability than Hf/HfO2/Si and HfN1.3/HfO2/Si capacitors.

AB - The dependence of the material and electrical properties of HfNx films on the nitrogen flow ratio has been investigated in this work. After annealing at 400 °C in the forming gas, the sputtered Hf thin film oxidizes, but the composition of the sputtered HfN1.0 and HfN1.3 thin films remains unchanged. In the case of the Hf/HfO2/Si structure, it is found that (1) oxygen diffuses from the film surface to the silicon substrate, and (2) oxygen is incorporated into the bulk of the Hf film by reduction of the underlying HfO2 film, after annealing at 400 °C. The results suggest that HfN1.3 is a poorer oxygen diffusion barrier than HfN1.0, and reveal that HfN1.0/HfO2/Si MOS capacitors possess better thermal stability than Hf/HfO2/Si and HfN1.3/HfO2/Si capacitors.

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U2 - 10.1016/j.jallcom.2009.08.040

DO - 10.1016/j.jallcom.2009.08.040

M3 - Article

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SN - 0925-8388

VL - 487

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EP - 692

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Thermal stability of hafnium and hafnium nitride gates on HfO₂ gate dielectrics

Abstract

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