Thermal stability of Ir-silicide/SiGe layers grown in a dual electron gun chamber at ultra-high vacuum (extended abstract)

Chen-Kuei Chung, J. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Heteroepitaxial Ir-silicide/SiGe layers on the top of p-Si(100) have been achieved at a substrate temperature of 450 °C. The co-deposited Ir-silicide layer was determined to be Ir3Si4 with four types of epitaxial modes. Thermal stability of the film was examined by using Auger electron spectroscopy and X-ray diffractometer. The Ir3Si4/SiGe layers were stable as annealed at 550 °C for 20 sec in a rapid thermal annealing furnace, while interdiffusion between Ir3Si4 and SiGe occurs at a temperature of 750 °C or higher for 20 sec. The traditional guard-ring fabrication process should be performed before epitaxial films deposition due to this thermal instability.

Original languageEnglish
Title of host publicationInfrared Detectors - Materials, Processing, and Devices
EditorsRalph L. Dawson, Ami Appelbaum
PublisherPubl by Materials Research Society
Pages319-323
Number of pages5
ISBN (Print)1558991956
Publication statusPublished - 1994 Jan 1
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 141993 Apr 16

Publication series

NameMaterials Research Society Symposium Proceedings
Volume299
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period93-04-1493-04-16

Fingerprint

Electron guns
electron guns
Ultrahigh vacuum
ultrahigh vacuum
Thermodynamic stability
thermal stability
chambers
Rapid thermal annealing
Epitaxial films
Diffractometers
Auger electron spectroscopy
Furnaces
thermal instability
diffractometers
Fabrication
X rays
Temperature
Auger spectroscopy
furnaces
electron spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chung, C-K., & Hwang, J. (1994). Thermal stability of Ir-silicide/SiGe layers grown in a dual electron gun chamber at ultra-high vacuum (extended abstract). In R. L. Dawson, & A. Appelbaum (Eds.), Infrared Detectors - Materials, Processing, and Devices (pp. 319-323). (Materials Research Society Symposium Proceedings; Vol. 299). Publ by Materials Research Society.
Chung, Chen-Kuei ; Hwang, J. / Thermal stability of Ir-silicide/SiGe layers grown in a dual electron gun chamber at ultra-high vacuum (extended abstract). Infrared Detectors - Materials, Processing, and Devices. editor / Ralph L. Dawson ; Ami Appelbaum. Publ by Materials Research Society, 1994. pp. 319-323 (Materials Research Society Symposium Proceedings).
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Chung, C-K & Hwang, J 1994, Thermal stability of Ir-silicide/SiGe layers grown in a dual electron gun chamber at ultra-high vacuum (extended abstract). in RL Dawson & A Appelbaum (eds), Infrared Detectors - Materials, Processing, and Devices. Materials Research Society Symposium Proceedings, vol. 299, Publ by Materials Research Society, pp. 319-323, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 93-04-14.

Thermal stability of Ir-silicide/SiGe layers grown in a dual electron gun chamber at ultra-high vacuum (extended abstract). / Chung, Chen-Kuei; Hwang, J.

Infrared Detectors - Materials, Processing, and Devices. ed. / Ralph L. Dawson; Ami Appelbaum. Publ by Materials Research Society, 1994. p. 319-323 (Materials Research Society Symposium Proceedings; Vol. 299).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chung C-K, Hwang J. Thermal stability of Ir-silicide/SiGe layers grown in a dual electron gun chamber at ultra-high vacuum (extended abstract). In Dawson RL, Appelbaum A, editors, Infrared Detectors - Materials, Processing, and Devices. Publ by Materials Research Society. 1994. p. 319-323. (Materials Research Society Symposium Proceedings).