Thermal stability of Ir-silicide/SiGe layers grown in a dual electron gun chamber at ultra-high vacuum (extended abstract)

C. K. Chung, J. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Heteroepitaxial Ir-silicide/SiGe layers on the top of p-Si(100) have been achieved at a substrate temperature of 450 °C. The co-deposited Ir-silicide layer was determined to be Ir3Si4 with four types of epitaxial modes. Thermal stability of the film was examined by using Auger electron spectroscopy and X-ray diffractometer. The Ir3Si4/SiGe layers were stable as annealed at 550 °C for 20 sec in a rapid thermal annealing furnace, while interdiffusion between Ir3Si4 and SiGe occurs at a temperature of 750 °C or higher for 20 sec. The traditional guard-ring fabrication process should be performed before epitaxial films deposition due to this thermal instability.

Original languageEnglish
Title of host publicationInfrared Detectors - Materials, Processing, and Devices
PublisherPubl by Materials Research Society
Pages319-323
Number of pages5
ISBN (Print)1558991956, 9781558991958
DOIs
Publication statusPublished - 1994 Jan 1
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 141993 Apr 16

Publication series

NameMaterials Research Society Symposium Proceedings
Volume299
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period93-04-1493-04-16

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Chung, C. K., & Hwang, J. (1994). Thermal stability of Ir-silicide/SiGe layers grown in a dual electron gun chamber at ultra-high vacuum (extended abstract). In Infrared Detectors - Materials, Processing, and Devices (pp. 319-323). (Materials Research Society Symposium Proceedings; Vol. 299). Publ by Materials Research Society. https://doi.org/10.1557/proc-299-319