Thermal stability of ohmic contact to n-type InGaAs layer

J. W. Wu; C. Y. Chang; K. C. Lin; E. Y. Chang; J. S. Chen; C. T. Lee

Thermal stability of ohmic contact to n-type InGaAs layer

J. W. Wu, C. Y. Chang, K. C. Lin, E. Y. Chang, J. S. Chen, C. T. Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450°C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au. A new phase of Au₄In appears after annealing at 300°C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of (Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450°C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of (Ti/Pt/Au)-InGaAs ohmic contact is better than that of (Ni/Ge/Au)-InGaAs ohmic contact.

Original language	English
Pages (from-to)	83-86
Number of pages	4
Journal	Journal of Electronic Materials
Volume	24
Issue number	2
Publication status	Published - 1995 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Thermal stability of ohmic contact to n-type InGaAs layer",

abstract = "The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450°C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au. A new phase of Au4In appears after annealing at 300°C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of (Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450°C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of (Ti/Pt/Au)-InGaAs ohmic contact is better than that of (Ni/Ge/Au)-InGaAs ohmic contact.",

author = "Wu, {J. W.} and Chang, {C. Y.} and Lin, {K. C.} and Chang, {E. Y.} and Chen, {J. S.} and Lee, {C. T.}",

year = "1995",

month = feb,

day = "1",

language = "English",

volume = "24",

pages = "83--86",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Thermal stability of ohmic contact to n-type InGaAs layer

AU - Wu, J. W.

AU - Chang, C. Y.

AU - Lin, K. C.

AU - Chang, E. Y.

AU - Chen, J. S.

AU - Lee, C. T.

PY - 1995/2/1

Y1 - 1995/2/1

N2 - The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450°C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au. A new phase of Au4In appears after annealing at 300°C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of (Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450°C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of (Ti/Pt/Au)-InGaAs ohmic contact is better than that of (Ni/Ge/Au)-InGaAs ohmic contact.

AB - The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450°C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au. A new phase of Au4In appears after annealing at 300°C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of (Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450°C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of (Ti/Pt/Au)-InGaAs ohmic contact is better than that of (Ni/Ge/Au)-InGaAs ohmic contact.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029251578&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029251578

SN - 0361-5235

VL - 24

SP - 83

EP - 86

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 2

ER -

Thermal stability of ohmic contact to n-type InGaAs layer

Abstract

All Science Journal Classification (ASJC) codes

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